Pagina 766 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL106-N-0-4-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: Axial, Radial Bend	Azione5.504	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
CFRM103-HF	Comchip Technology	DIODE GEN PURP 200V 1A MINISMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: Mini SMA/SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: SOD-123T	Azione5.328	200V	1A (DC)	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	SOD-123T	Mini SMA/SOD-123	-55°C ~ 150°C
AR4PGHM3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 2A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 77pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-277, 3-PowerDFN	Azione7.216	400V	2A (DC)	1.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 400V	77pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
10BQ015TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 350mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-214AA, SMB	Azione1.016.028	15V	1A	350mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 15V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C
D2601N85T	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 9000V 3460A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione7.344	-	-	-	-	-	-	-	-	-	-	-
R5001615XXWA	Powerex Inc.	DIODE GEN PURP 1.6KV 150A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: DO-205AA, DO-8, Stud	Azione2.512	1600V	150A	1.4V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 1600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
1N4050R	Powerex Inc.	DIODE GEN PURP 400V 275A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	pacchetto: DO-205AB, DO-9, Stud	Azione3.520	400V	275A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
FR30KR05	GeneSiC Semiconductor	DIODE GEN PURP REV 800V 30A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: DO-203AB, DO-5, Stud	Azione6.608	800V	30A	1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
AS3PM-M3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 2.1A TO277 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.1A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-277, 3-PowerDFN	Azione4.352	1000V	2.1A (DC)	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	10µA @ 1000V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
1N6479-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AB, MELF (Glass)	Azione3.536	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
RSFMLHR3G	TSC America Inc.	DIODE, FAST, 0.5A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione3.824	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
DB2J40600L	Panasonic Electronic Components	DIODE SCHOTTKY 40V 100MA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 900ps Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 2.2pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: - Operating Temperature - Junction: 125°C (Max)	pacchetto: SC-90, SOD-323F	Azione72.000	40V	100mA	600mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	900ps	5µA @ 40V	2.2pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	-	125°C (Max)
ES07B-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO219 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione1.701.396	100V	500mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
MBRS360T3G	ON Semiconductor	DIODE SCHOTTKY 60V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-214AB, SMC	Azione2.752.332	60V	3A	740mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
DB3X314K0L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 30MA MINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 300nA @ 30V Capacitance @ Vr, F: 1.5pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Operating Temperature - Junction: 125°C (Max)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione169.890	30V	30mA (DC)	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	1ns	300nA @ 30V	1.5pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	125°C (Max)
SURA8215T3G-VF01	onsemi	DIODE GEN PURP 150V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Azione15.000	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 150 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
FE3D	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 175°C	pacchetto: -	Request a Quote	200 V	3A	980 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201	-50°C ~ 175°C
MS1N6392	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PVMPW-2306	Sanken Electric USA Inc.	SCHOTTKY BARRIER DIODE FOR SOLAR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -	pacchetto: -	Request a Quote	40 V	30A	550 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 40 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263	-
S307040F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
TSD1GLWH	Taiwan Semiconductor Corporation	1A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: -	Azione60.000	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	11pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-40°C ~ 175°C
S1GAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione42.000	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	8pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
ED503S_L2_00001	Panjit International Inc.	DIODE GEN PURP 300V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	300 V	5A	1.25 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
CDS4150-1-TR	Microchip Technology	SIGNAL OR COMPUTER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD125SB45B-T2	SMC Diode Solutions	DIODE SCHOTTKY 45V 15A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 45 V Capacitance @ Vr, F: 800pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	45 V	15A	640 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 45 V	800pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
RBR2VWM60ATR	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 150°C	pacchetto: -	Azione23.175	60 V	2A	650 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	75 µA @ 60 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	150°C
FS1M-LTPS01	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
R3240	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

RL106-N-0-4-AP

Micro Commercial Co

DIODE GEN PURP 800V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial, Radial Bend
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: Axial, Radial Bend

Azione5.504

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

Axial, Radial Bend

A-405

-55°C ~ 150°C

CFRM103-HF

Comchip Technology

DIODE GEN PURP 200V 1A MINISMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: Mini SMA/SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: SOD-123T

Azione5.328

200V

1A (DC)

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

SOD-123T

Mini SMA/SOD-123

-55°C ~ 150°C

AR4PGHM3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 77pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

Azione7.216

400V

2A (DC)

1.6V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 400V

77pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

10BQ015TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 350mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-214AA, SMB

Azione1.016.028

15V

1A

350mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 15V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 125°C

D2601N85T

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 9000V 3460A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione7.344

-

R5001615XXWA

Powerex Inc.

DIODE GEN PURP 1.6KV 150A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 30mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: DO-205AA, DO-8, Stud

Azione2.512

1600V

150A

1.4V @ 470A

Standard Recovery >500ns, > 200mA (Io)

7µs

30mA @ 1600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

1N4050R

Powerex Inc.

DIODE GEN PURP 400V 275A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 190°C

pacchetto: DO-205AB, DO-9, Stud

Azione3.520

400V

275A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 190°C

FR30KR05

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 30A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: DO-203AB, DO-5, Stud

Azione6.608

800V

30A

1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 800V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

AS3PM-M3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.1A TO277

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.1A (DC)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

Azione4.352

1000V

2.1A (DC)

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

10µA @ 1000V

37pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

1N6479-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

Azione3.536

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

RSFMLHR3G

TSC America Inc.

DIODE, FAST, 0.5A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione3.824

-

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

DB2J40600L

Panasonic Electronic Components

DIODE SCHOTTKY 40V 100MA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 900ps
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 2.2pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: -
Operating Temperature - Junction: 125°C (Max)

pacchetto: SC-90, SOD-323F

Azione72.000

40V

100mA

600mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

900ps

5µA @ 40V

2.2pF @ 10V, 1MHz

Surface Mount

SC-90, SOD-323F

-

125°C (Max)

ES07B-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO219

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione1.701.396

100V

500mA

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

MBRS360T3G

ON Semiconductor

DIODE SCHOTTKY 60V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-214AB, SMC

Azione2.752.332

60V

3A

740mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

DB3X314K0L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 30MA MINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 30mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 300nA @ 30V
Capacitance @ Vr, F: 1.5pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Operating Temperature - Junction: 125°C (Max)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione169.890

30V

30mA (DC)

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

1ns

300nA @ 30V

1.5pF @ 10V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G3-B

125°C (Max)

SURA8215T3G-VF01

onsemi

DIODE GEN PURP 150V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Azione15.000

150 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 150 V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

FE3D

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C

pacchetto: -

Request a Quote

200 V

3A

980 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201

-50°C ~ 175°C

MS1N6392

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

PVMPW-2306

Sanken Electric USA Inc.

SCHOTTKY BARRIER DIODE FOR SOLAR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

40 V

30A

550 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 mA @ 40 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263

-

S307040F

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

TSD1GLWH

Taiwan Semiconductor Corporation

1A, 600V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: -

Azione60.000

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

11pF @ 4V, 1MHz

Surface Mount

SOD-123W

-40°C ~ 175°C

S1GAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A THIN SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione42.000

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

8pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

ED503S_L2_00001

Panjit International Inc.

DIODE GEN PURP 300V 5A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

300 V

5A

1.25 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 300 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

CDS4150-1-TR

Microchip Technology

SIGNAL OR COMPUTER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

SD125SB45B-T2

SMC Diode Solutions

DIODE SCHOTTKY 45V 15A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Capacitance @ Vr, F: 800pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

45 V

15A

640 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 45 V

800pF @ 5V, 1MHz

Surface Mount

Die

-55°C ~ 175°C

RBR2VWM60ATR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 150°C

pacchetto: -

Azione23.175

60 V

2A

650 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

75 µA @ 60 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

150°C

FS1M-LTPS01

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-50°C ~ 150°C

R3240

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-