Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 2A DO220AA
|
pacchetto: DO-220AA |
Azione2.464 |
|
90V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | 65pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO220AA
|
pacchetto: DO-220AA |
Azione2.512 |
|
100V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
||
IXYS |
DIODE GEN PURP 1.2KV 2.3A RADIAL
|
pacchetto: Radial |
Azione2.880 |
|
1200V | 2.3A | 1.3V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1200V | - | Through Hole | Radial | - | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A SMB
|
pacchetto: DO-214AA, SMB |
Azione664.860 |
|
30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP
|
pacchetto: TO-220-2 Full Pack |
Azione3.360 |
|
1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 35A DO203AB
|
pacchetto: DO-203AB, DO-5, Stud |
Azione3.440 |
|
800V | 35A | 1.4V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
||
Powerex Inc. |
DIODE GEN PURP 1.2KV 175A DO205
|
pacchetto: DO-205AA, DO-8, Stud |
Azione5.440 |
|
1200V | 175A | 1.65V @ 470A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 45mA @ 1200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SOFT FAST 30A TO-247
|
pacchetto: TO-247-3 |
Azione4.048 |
|
400V | 30A | 1.41V @ 30A | Standard Recovery >500ns, > 200mA (Io) | 60ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 6A, 300V, 35N
|
pacchetto: DO-201AD, Axial |
Azione7.072 |
|
300V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 600V 1.2A AXIAL
|
pacchetto: Axial |
Azione3.296 |
|
600V | 1.2A | 1.55V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 600V 1.2A AXIAL
|
pacchetto: Axial |
Azione6.624 |
|
600V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SMA
|
pacchetto: DO-214AC, SMA |
Azione3.456 |
|
600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione7.952 |
|
60V | 3A | 720mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 145pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, FAST, 2A, 50V, 150NS, DO-
|
pacchetto: DO-214AA, SMB |
Azione3.600 |
|
50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE MODULE 100V 120A D-67
|
pacchetto: D-67 HALF-PAK |
Azione3.632 |
|
100V | 120A | 910mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 100V | 2650pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 175°C |
||
Micro Commercial Co |
DIODE GEN PURP 1KV 1A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione27.600 |
|
1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 150°C |
||
Comchip Technology |
DIODE GEN PURP 1KV 1A SOD123H
|
pacchetto: SOD-123H |
Azione757.182 |
|
1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Surface Mount | SOD-123H | SOD-123H | -55°C ~ 150°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
200 V | 1A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 150°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 30V 6A TO220AC
|
pacchetto: - |
Request a Quote |
|
30 V | 6A | 550 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
||
Comchip Technology |
DIODE SWITCHING 100V 250MA 200MW
|
pacchetto: - |
Azione8.850 |
|
100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
||
Microchip Technology |
DIODE GP 800V 1.5A A SQ-MELF
|
pacchetto: - |
Request a Quote |
|
800 V | 1.5A | 1.8 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 800 V | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 175°C |
||
Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, LOW VF, 3A,
|
pacchetto: - |
Azione13.188 |
|
40 V | 3A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 30 V | 210pF @ 4V, 1MHz | Surface Mount | SOD-123H | iSGA (SOD-123HS) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE SCHOTTKY 60V 5A DO214AC
|
pacchetto: - |
Azione1.194 |
|
60 V | 5A | 750 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Panjit International Inc. |
DIODE GEN PURP 800V 1A SMB
|
pacchetto: - |
Azione2.400 |
|
800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A US2H
|
pacchetto: - |
Azione18.303 |
|
30 V | 2A | 470 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 30 V | 380pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | US2H | 150°C (Max) |
||
Microchip Technology |
UFR,FRR
|
pacchetto: - |
Request a Quote |
|
500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SOD128
|
pacchetto: - |
Azione114.114 |
|
200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
||
Microchip Technology |
DIODE GEN PURP 400V 500MA DO35
|
pacchetto: - |
Request a Quote |
|
400 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 175°C |