Pagina 311 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  311/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SS2PH9HM3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 90V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione2.464
90V
2A
800mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 90V
65pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
ESH2PB-E3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione2.512
100V
2A
980mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
DS1-12D
IXYS

DIODE GEN PURP 1.2KV 2.3A RADIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Radial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Radial
Azione2.880
1200V
2.3A
1.3V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
700µA @ 1200V
-
Through Hole
Radial
-
-40°C ~ 150°C
hot VS-20BQ030TRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione664.860
30V
2A
470mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
20ETS12FP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 20A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220AC Full Pack
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-220-2 Full Pack
Azione3.360
1200V
20A
1.1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1200V
-
Through Hole
TO-220-2 Full Pack
TO-220AC Full Pack
-40°C ~ 150°C
JAN1N3766R
Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-203AB, DO-5, Stud
Azione3.440
800V
35A
1.4V @ 110A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 175°C
R5031218FSWA
Powerex Inc.

DIODE GEN PURP 1.2KV 175A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 175A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 45mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-205AA, DO-8, Stud
Azione5.440
1200V
175A
1.65V @ 470A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
45mA @ 1200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 150°C
VS-30APF04-M3
Vishay Semiconductor Diodes Division

DIODE SOFT FAST 30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-3
Azione4.048
400V
30A
1.41V @ 30A
Standard Recovery >500ns, > 200mA (Io)
60ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
SF65G A0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione7.072
300V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
RD 2AV1
Sanken

DIODE GEN PURP 600V 1.2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Axial
Azione3.296
600V
1.2A
1.55V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
EM 2AV
Sanken

DIODE GEN PURP 600V 1.2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Axial
Azione6.624
600V
1.2A
920mV @ 1.2A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
BYG24JHM3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A SMA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.456
600V
1.5A
1.25V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
B360A-E3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.952
60V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
145pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2A R5G
TSC America Inc.

DIODE, FAST, 2A, 50V, 150NS, DO-

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione3.600
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
VS-123NQ100PBF
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 100V
  • Capacitance @ Vr, F: 2650pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: D-67 HALF-PAK
Azione3.632
100V
120A
910mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 100V
2650pF @ 5V, 1MHz
Chassis Mount
D-67 HALF-PAK
D-67
-55°C ~ 175°C
hot FS1M-TP
Micro Commercial Co

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (HSMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione27.600
1000V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-50°C ~ 150°C
CFRMT107-HF
Comchip Technology

DIODE GEN PURP 1KV 1A SOD123H

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SOD-123H
Azione757.182
1000V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
-
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
M3FL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 200 V
-
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 150°C
SB630_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 6A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
30 V
6A
550 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 125°C
BAS316-HF
Comchip Technology

DIODE SWITCHING 100V 250MA 200MW

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione8.850
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
JAN1N6623U-TR
Microchip Technology

DIODE GP 800V 1.5A A SQ-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
800 V
1.5A
1.8 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
500 nA @ 800 V
-
Surface Mount
SQ-MELF, A
A, SQ-MELF
-65°C ~ 175°C
GSPSL34
Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, LOW VF, 3A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 30 V
  • Capacitance @ Vr, F: 210pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: iSGA (SOD-123HS)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione13.188
40 V
3A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 30 V
210pF @ 4V, 1MHz
Surface Mount
SOD-123H
iSGA (SOD-123HS)
-55°C ~ 150°C
SK56AHE3-LTP
Micro Commercial Co

DIODE SCHOTTKY 60V 5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione1.194
60 V
5A
750 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UF1K_R1_00001
Panjit International Inc.

DIODE GEN PURP 800V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione2.400
800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
1 µA @ 800 V
17pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
CUHS20F30-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 30 V
  • Capacitance @ Vr, F: 380pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione18.303
30 V
2A
470 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 30 V
380pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C (Max)
JANTXV1N5419US-TR
Microchip Technology

UFR,FRR

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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500 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
1 µA @ 500 V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
RS1DFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione114.114
200 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
7pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
1N6662-TR
Microchip Technology

DIODE GEN PURP 400V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 nA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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400 V
500mA
1 V @ 400 mA
Standard Recovery >500ns, > 200mA (Io)
-
50 nA @ 400 V
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C