Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE RECT GPP 1A 600V DO-204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.048 |
|
600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | 45pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 90V 1A MSR
|
pacchetto: DO-41 Mini, Axial |
Azione6.720 |
|
90V | 1A | 730mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione6.048 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 40V 16A TO220AC
|
pacchetto: TO-220-2 |
Azione9.588 |
|
40V | 16A | 570mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
||
STMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC
|
pacchetto: TO-220-2 |
Azione6.624 |
|
600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
||
IXYS |
DIODE SCHOTTKY 300V 5A TO252AA
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.752 |
|
300V | 5A | 2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.800 |
|
40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
Powerex Inc. |
DIODE MODULE 600V 1600A DO200AA
|
pacchetto: DO-200AA, A-PUK |
Azione2.544 |
|
600V | 1600A | 1.2V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 7µs | 50mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
||
Infineon Technologies Industrial Power and Controls Americas |
DIODE RECTIFIER FAST 2000V 651A
|
pacchetto: - |
Azione2.624 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 12A,
|
pacchetto: DO-201AD, Axial |
Azione7.888 |
|
60V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 600V,
|
pacchetto: DO-214AA, SMB |
Azione6.720 |
|
600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
||
Sanken |
DIODE GEN PURP 100V 1A AXIAL
|
pacchetto: Axial |
Azione4.800 |
|
100V | 1A | 970mV @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 4
|
pacchetto: DO-219AB |
Azione4.816 |
|
40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 400V,
|
pacchetto: DO-204AL, DO-41, Axial |
Azione3.120 |
|
400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, FAST, 1A, 1000V, 500NS, D
|
pacchetto: DO-204AL, DO-41, Axial |
Azione6.800 |
|
- | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 200V 4A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione5.296 |
|
200V | 4A | 1.35V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 40V 200MA EMD2
|
pacchetto: SC-79, SOD-523 |
Azione75.600 |
|
40V | 200mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
||
KYOCERA AVX |
SCHOTTKY DIODES
|
pacchetto: - |
Request a Quote |
|
60 V | 3A | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | 1206 (3216 Metric) | 1206 | -55°C ~ 125°C |
||
Microchip Technology |
DIODE GEN PURPOSE
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
50NS, 1A, 300V, HIGH EFFICIENT R
|
pacchetto: - |
Request a Quote |
|
300 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 20pF @ 4V, 1MHz | Surface Mount | SOD-123 | Sub SMA | -55°C ~ 150°C |
||
onsemi |
DFH10 - RECTIFIER DIODE, 1A, 400
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
DIODE SCHOTTKY 100V 1A DO41
|
pacchetto: - |
Request a Quote |
|
100 V | 1A | 690 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO041, Axial | DO-41 | -65°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 100V 6A R-6
|
pacchetto: - |
Request a Quote |
|
100 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 100 V | 150pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
||
Panjit International Inc. |
DIODE GEN PURP 200V 8A TO220AC
|
pacchetto: - |
Azione6.000 |
|
200 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 200 V | 80pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
||
Micro Commercial Co |
DIODE SCHOTTKY 100V 15A TO277
|
pacchetto: - |
Azione20.094 |
|
100 V | 15A | 820 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C |
||
EIC SEMICONDUCTOR INC. |
DIODE GEN PURP 800V 3A DO201AD
|
pacchetto: - |
Request a Quote |
|
800 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
||
NTE Electronics, Inc |
DIODE SCHOTTKY 100V 2A DO214AA
|
pacchetto: - |
Request a Quote |
|
100 V | 2A | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |
||
Comchip Technology |
DIODE SCHOTTKY 60V 3A DO214AA
|
pacchetto: - |
Request a Quote |
|
60 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |