Diodi - Raddrizzatori - Singoli

CDBMTS230-HF

Comchip Technology

DIODE SCHOTTKY 30V 2A SOD123S

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: 160pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123S
• Supplier Device Package: SOD-123S
• Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: SOD-123S

MURS360SHE3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-214AA, SMB

ESH2PBHE3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-220AA

R6110830XXYZ

Powerex Inc.

DIODE GEN PURP 800V 300A DO205AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 13µs
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -65°C ~ 190°C

pacchetto: DO-205AB, DO-9, Stud

R5110410XXWA

Powerex Inc.

DIODE GEN PURP 400V 100A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7µs
• Current - Reverse Leakage @ Vr: 30mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: DO-205AA, DO-8, Stud

ES2C-13

Diodes Incorporated

DIODE GEN PURP 150V 2A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

1N3671A

GeneSiC Semiconductor

DIODE GEN PURP 800V 12A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: DO-203AA, DO-4, Stud

1N3600

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AH, DO-35, Axial

VI20150SGHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 150V TO-262AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

EH 1V1

Sanken

DIODE GEN PURP 400V 600MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 600mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: Axial

1N5402GHB0G

TSC America Inc.

DIODE, 3A, 200V, AEC-Q101, DO-20

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

S1GL RTG

TSC America Inc.

DIODE, 1A, 400V, SUB SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-219AB

S3JBHR5G

TSC America Inc.

DIODE, 3A, 600V, AEC-Q101, DO-21

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

SDURF820

SMC Diode Solutions

DIODE GEN PURP 200V ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack, Isolated Tab

VS-20TQ045PBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.7mA @ 45V
• Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

MCL4448-TR

Vishay Semiconductor Diodes Division

DIODE GEN 75V 200MA MICROMELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 8ns
• Current - Reverse Leakage @ Vr: 25nA @ 20V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: MicroMELF
• Operating Temperature - Junction: 175°C (Max)

pacchetto: 2-SMD, No Lead

VS-3C06EV07T-M3-I

Vishay General Semiconductor - Diodes Division

SIC-G3-SLIMDPAK 2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 47 µA @ 650 V
• Capacitance @ Vr, F: 255pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

MURH8100E

onsemi

RECTIFIER, AVALANCHE, 4A, 1000V,

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

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FR205GB-G

Comchip Technology

DIODE GEN PURP 600V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

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SMS330

Diotec Semiconductor

SCHOTTKY MELF 30V 3A 150C

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB
• Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

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HS2GFL

Taiwan Semiconductor Corporation

50NS, 2A, 400V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

SF11G-BP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

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UFM17PL-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A SOD123FL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

BAT721C-ZLR

NXP

DIODE SCHOTTKY TO-236AB

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

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RHRP15120-F102

onsemi

DIODE GEN PURP 1.2KV 15A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

SM5062

Diotec Semiconductor

IC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB (Plastic)
• Operating Temperature - Junction: -50°C ~ 175°C

pacchetto: -

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FR4MBFL-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AA, SMB Flat Leads
• Supplier Device Package: SMBF
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

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SB280-TP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 80 V
• Capacitance @ Vr, F: 170pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -50°C ~ 125°C

pacchetto: -

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