Pagina 1708 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  1.708/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot 15ETL06S
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 270ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.192
600V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
270ns
10µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
B130LAW-7
Diodes Incorporated

DIODE SCHOTTKY 30V 1A SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: SOD-123
Azione5.744
30V
1A
420mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
40pF @ 10V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
6A8
6A8
Micro Commercial Co

DIODE GEN PURP 800V 6A R6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: R6, Axial
Azione6.816
800V
6A
950mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
R6, Axial
R-6
-55°C ~ 125°C
VS-SD1100C30C
Vishay Semiconductor Diodes Division

DIODE GP 3KV 1100A B43 PUK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3000V
  • Current - Average Rectified (Io): 1100A
  • Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: B-43, PUK
  • Supplier Device Package: B-43, Hockey PUK
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: B-43, PUK
Azione3.456
3000V
1100A
1.44V @ 1500A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
-
Stud Mount
B-43, PUK
B-43, Hockey PUK
-40°C ~ 150°C
VIT5200-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione6.896
200V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-40°C ~ 150°C
AS3BJ-M3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AA, SMB
Azione5.744
600V
3A
1.05V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
20µA @ 600V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
SE20PGHM3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.6A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione3.376
400V
1.6A
1.05V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
5µA @ 400V
13pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
ES1LJHM2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.320
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
18pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
VSB20L45-M3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A P600

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 390mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 45V
  • Capacitance @ Vr, F: 2470pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: P600, Axial
Azione19.728
45V
7.5A
390mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 45V
2470pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-40°C ~ 150°C
hot VS-150EBU02
Vishay Semiconductor Diodes Division

DIODE GEN 200V 150A POWIRTAB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: PowerTab?, PowIRtab?
  • Supplier Device Package: PowIRtab?
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: PowerTab?, PowIRtab?
Azione27.600
200V
150A
1.13V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
50µA @ 200V
-
Through Hole
PowerTab?, PowIRtab?
PowIRtab?
-55°C ~ 175°C
1N2785
Microchip Technology

DIODE GEN PURP 400V 22A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 22A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
Request a Quote
400 V
22A
1.2 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
SMD320PLQ-TP
Micro Commercial Co

DIODE SCHOTTKY 200V 3A SOD-123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
200 V
3A
900 mV @ 3 A
No Recovery Time > 500mA (Io)
-
5 µA @ 200 V
60pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 175°C
B150AF-13
Diodes Incorporated

DIODE SCHOTTKY 50V 1A SMAF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 50 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione29.886
50 V
1A
650 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 50 V
45pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
S15JC
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 15A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 93pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione8.835
600 V
15A
1.1 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 600 V
93pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3MC
MDD

DIODE GEN PURP 1KV 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1000 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
SBT2520A
Microchip Technology

POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BYC30W-1200PQ
WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO247-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: -
Azione1.488
1200 V
30A
3.3 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
65 ns
250 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247-2
175°C (Max)
CGRAT104L-HF
Comchip Technology

DIODE GEN PURP 800V 1A 2010

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2010/DO-214AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
800 V
1A
930 mV @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
8.2pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
2010/DO-214AC
-65°C ~ 175°C
SK510AQ-LTP
Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 100V

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione29.970
100 V
5A
800 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 100 V
150pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
JANHCA1N6677
Microchip Technology

DIODE SCHOTTKY 40V 200MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 40 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: -
Request a Quote
40 V
200mA
500 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
5 µA @ 40 V
50pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 125°C
RL203GP-AP
Micro Commercial Co

DIODE GEN PURP 200V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
200 V
2A
1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 200 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
RJU6054WDPK-M0-T0
Renesas Electronics Corporation

RECTIFIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CMPD2003-TR-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 200V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Azione88.980
200 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 200 V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
SB35AFC_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 50V 3A SMAF-C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 50 V
  • Capacitance @ Vr, F: 385pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
50 V
3A
750 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 50 V
385pF @ 0V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C
BAT42W
Taiwan Semiconductor Corporation

SOD-123, 30V, 0.2A, SCHOTTKY DIO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
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30 V
200mA
1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
500 nA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
V30KL45-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 6.3A FLATPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 6.3A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.7 mA @ 45 V
  • Capacitance @ Vr, F: 4750pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: -
Azione9.000
45 V
6.3A
570 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.7 mA @ 45 V
4750pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
-40°C ~ 150°C
JAN1N6642UB2R-TR
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 75 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: UB2
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
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75 V
300mA
1.2 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
5 ns
500 nA @ 75 V
5pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
UB2
-65°C ~ 175°C
1N5819UR-1E3
Microchip Technology

DIODE SCHOTTKY 45V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 45 V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB (MELF, LL41)
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: -
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45 V
1A
490 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 45 V
70pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB (MELF, LL41)
-65°C ~ 125°C