Pagina 128 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDW20G65C5FKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 20A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 700µA @ 650V Capacitance @ Vr, F: 590pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-247-3	Azione2.352	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	700µA @ 650V	590pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
GP30GL-6615E3/72	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione6.192	-	-	-	-	-	-	-	-	-	-	-
1N4947GP-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione5.952	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N5395-T	Diodes Incorporated	DIODE GEN PURP 400V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AC, DO-15, Axial	Azione7.968	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
DZ1070N26K	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE MOD 1800V 1700A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione5.312	-	-	-	-	-	-	-	-	-	-	-
1N5620US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: SQ-MELF, A	Azione6.300	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
MUR2505	GeneSiC Semiconductor	DIODE GEN PURP 50V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-203AA, DO-4, Stud	Azione5.392	50V	25A	1V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
SFF1608G C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 600V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione6.800	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
VB30120S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 30A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione2.496	120V	30A	1.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
MBR10200 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2	Azione7.392	200V	10A	1.05V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
U3B-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione2.160	100V	2A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SJPE-H4VL	Sanken	DIODE SCHOTTKY SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: 2-SMD, J-Lead	Azione20.316	40V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 40V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
S5PMS-M3/86A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1.8A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.8A (DC) Voltage - Forward (Vf) (Max) @ If: 940mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione2.784	1000V	1.8A (DC)	940mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	2.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TST30H120CW C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 30A, 12 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 880mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3	Azione3.712	120V	15A	880mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
RS1JLWHRVG	TSC America Inc.	DIODE, FAST, 1A, 600V, 150NS, AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: SOD-123W	Azione5.600	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SSA34-E3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione479.976	40V	3A	490mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
CDSFR4148	Comchip Technology	DIODE GEN PURP 75V 150MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	pacchetto: 1005 (2512 Metric)	Azione7.056	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
DL4001-13-F	Diodes Incorporated	DIODE GEN PURP 50V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-213AB, MELF	Azione60.924	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-55°C ~ 150°C
B550C-13-F	Diodes Incorporated	DIODE SCHOTTKY 50V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione297.000	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	300pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
1N2458	Microchip Technology	DIODE GEN PURP 50V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	50 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 50 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
MUR320J	WeEn Semiconductors	MUR320/SMC/REEL 13" Q1/T1 *STAN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: 175°C	pacchetto: -	Request a Quote	200 V	3A	875 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	SMC	175°C
S3GBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione18.000	400 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 400 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2AB-HF	Comchip Technology	DIODE GP 50V 2A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	50 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	28pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
DTH810D	Diodes Incorporated	DIODE GEN PURP 1KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione294	1000 V	8A	2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1000 V	40pF @ 4V, 1MHz	Through Hole	TO-220-2	TO220AC (Type WX)	-55°C ~ 150°C
ES2DSMA	Diotec Semiconductor	DIODE SUPERFAST SMA 200V 20NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 3 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC, SMA Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	200 V	3A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	3 µA @ 200 V	-	Surface Mount	DO-214AC, SMA	DO-214AC, SMA	-50°C ~ 150°C
1N3494R	Microchip Technology	DIODE GEN PURP REV 300V 35A DO21 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Press Fit Package / Case: DO-208AA Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	300 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Press Fit	DO-208AA	DO-21	-65°C ~ 175°C
S20470	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAS716	Good-Ark Semiconductor	DIODE, LOW LEAKAGE, 200MA, 75V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione30.363	75 V	200mA	1.25 V @ 1 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C

IDW20G65C5FKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 20A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 700µA @ 650V
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-247-3

Azione2.352

650V

20A (DC)

1.7V @ 20A

No Recovery Time > 500mA (Io)

0ns

700µA @ 650V

590pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

GP30GL-6615E3/72

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione6.192

-

1N4947GP-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione5.952

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N5395-T

Diodes Incorporated

DIODE GEN PURP 400V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AC, DO-15, Axial

Azione7.968

400V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

DZ1070N26K

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE MOD 1800V 1700A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione5.312

-

1N5620US

Microsemi Corporation

DIODE GEN PURP 800V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: SQ-MELF, A

Azione6.300

800V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 800V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

MUR2505

GeneSiC Semiconductor

DIODE GEN PURP 50V 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-203AA, DO-4, Stud

Azione5.392

50V

25A

1V @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

SFF1608G C0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 600V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3 Full Pack, Isolated Tab

Azione6.800

600V

16A

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

50pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

VB30120S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione2.496

120V

30A

1.1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

MBR10200 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

Azione7.392

200V

10A

1.05V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 200V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

U3B-E3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione2.160

100V

2A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

10µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SJPE-H4VL

Sanken

DIODE SCHOTTKY SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: 2-SMD, J-Lead

Azione20.316

40V

2A

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 40V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

S5PMS-M3/86A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1.8A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione2.784

1000V

1.8A (DC)

940mV @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

2.5µs

10µA @ 1000V

40pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

TST30H120CW C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 30A, 12

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3

Azione3.712

120V

15A

880mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 120V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

RS1JLWHRVG

TSC America Inc.

DIODE, FAST, 1A, 600V, 150NS, AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: SOD-123W

Azione5.600

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 600V

-

Surface Mount

SOD-123W

SOD123W

-55°C ~ 175°C

SSA34-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione479.976

40V

3A

490mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

CDSFR4148

Comchip Technology

DIODE GEN PURP 75V 150MA 1005

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

pacchetto: 1005 (2512 Metric)

Azione7.056

75V

150mA

1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

4ns

2.5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

DL4001-13-F

Diodes Incorporated

DIODE GEN PURP 50V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-213AB, MELF

Azione60.924

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-55°C ~ 150°C

B550C-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione297.000

50V

5A

700mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

300pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

1N2458

Microchip Technology

DIODE GEN PURP 50V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

50 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 50 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

MUR320J

WeEn Semiconductors

MUR320/SMC/REEL 13" Q1/T1 *STAN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C

pacchetto: -

Request a Quote

200 V

3A

875 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

SMC

175°C

S3GBH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione18.000

400 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 400 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RS2AB-HF

Comchip Technology

DIODE GP 50V 2A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

50 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

28pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

DTH810D

Diodes Incorporated

DIODE GEN PURP 1KV 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione294

1000 V

8A

2 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

85 ns

5 µA @ 1000 V

40pF @ 4V, 1MHz

Through Hole

TO-220-2

TO220AC (Type WX)

-55°C ~ 150°C

ES2DSMA

Diotec Semiconductor

DIODE SUPERFAST SMA 200V 20NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC, SMA
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

200 V

3A

900 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

3 µA @ 200 V

-

Surface Mount

DO-214AC, SMA

-50°C ~ 150°C

1N3494R

Microchip Technology

DIODE GEN PURP REV 300V 35A DO21

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Press Fit
Package / Case: DO-208AA
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

300 V

35A

1.1 V @ 35 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 300 V

-

Press Fit

DO-208AA

DO-21

-65°C ~ 175°C

S20470

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

BAS716

Good-Ark Semiconductor

DIODE, LOW LEAKAGE, 200MA, 75V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione30.363

75 V

200mA

1.25 V @ 1 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

5 nA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C