Pagina 127 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL105-N-0-2-BP	Micro Commercial Co	DIODE GEN PURP 600V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: Axial, Radial Bend	Azione3.008	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
DLE30E	ON Semiconductor	DIODE GEN PURP 400V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: Axial Operating Temperature - Junction: 150°C (Max)	pacchetto: DO-201AD, Axial	Azione7.072	400V	3A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	20µA @ 400V	-	Through Hole	DO-201AD, Axial	Axial	150°C (Max)
DGS20-025A	IXYS	DIODE SCHOTTKY 250V 18A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 250V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: TO-220-2	Azione4.432	250V	18A	1.5V @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 250V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
2A01G-T	Diodes Incorporated	DIODE GEN PURP 50V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AC, DO-15, Axial	Azione2.848	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 175°C
SET130104	Semtech Corporation	DIODE GEN PURP 400V 15A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Solder Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: Module	Azione4.832	400V	15A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Solder	Module	-	-55°C ~ 150°C
SFF2001G C0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 50V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione4.368	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
UGB8GTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione6.208	400V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
MBR1645HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2	Azione7.040	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBRF1635HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-220-2 Full Pack, Isolated Tab	Azione3.072	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 35V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
VS-MBRB1035PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.552	35V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
SR810 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione5.680	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES1HL RFG	TSC America Inc.	DIODE, SUPER FAST, 1A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione6.784	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
TSS42L RWG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005 Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: 1005 (2512 Metric)	Azione6.800	30V	200A	650mV @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	1005 (2512 Metric)	1005	-55°C ~ 125°C
SR109 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione7.888	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SDURD860TR	SMC Diode Solutions	DIODE GEN PURP 600V DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 8µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione6.352	600V	-	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	8µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
VS-12EWH06FN-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 12A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione21.126	600V	12A	2.5V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-65°C ~ 175°C
VS-30APF06-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-247-3	Azione7.812	600V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
1N5822US	Microsemi Corporation	DIODE SCHOTTKY 40V 3A B-MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: SQ-MELF, B	Azione7.008	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100mA @ 40V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
CPD200-CEN1384B-CT	Central Semiconductor Corp	BARE DIE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SIDC30D60E6X1SA1	Infineon Technologies	DIODE GP 600V 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	600 V	75A	1.25 V @ 75 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
JANTX1N6080	Microchip Technology	DIODE GEN PURP 100V 12A G AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: G, Axial Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C	pacchetto: -	Request a Quote	100 V	12A	1.5 V @ 37.7 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 100 V	-	Through Hole	G, Axial	G, Axial	-65°C ~ 155°C
1N5407GH-A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	800 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JANS1N5616-TR	Microchip Technology	DIODE GEN PURP 400V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 200°C
RS1KH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione45.000	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
FR102G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	100 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4448W_R1_00001	Panjit International Inc.	DIODE GEN PURP 75V 150MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione79.242	75 V	150mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
B320AE-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	140pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
MBR1040VL_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450 µA @ 40 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: 125°C	pacchetto: -	Azione23.883	40 V	1A	360 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	450 µA @ 40 V	150pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	125°C

RL105-N-0-2-BP

Micro Commercial Co

DIODE GEN PURP 600V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial, Radial Bend
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: Axial, Radial Bend

Azione3.008

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

Axial, Radial Bend

A-405

-55°C ~ 150°C

DLE30E

ON Semiconductor

DIODE GEN PURP 400V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: 150°C (Max)

pacchetto: DO-201AD, Axial

Azione7.072

400V

3A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

20µA @ 400V

-

Through Hole

DO-201AD, Axial

Axial

150°C (Max)

DGS20-025A

IXYS

DIODE SCHOTTKY 250V 18A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-2

Azione4.432

250V

18A

1.5V @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 250V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

2A01G-T

Diodes Incorporated

DIODE GEN PURP 50V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AC, DO-15, Axial

Azione2.848

50V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 175°C

SET130104

Semtech Corporation

DIODE GEN PURP 400V 15A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Solder
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: Module

Azione4.832

400V

15A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

-

Solder

Module

-

-55°C ~ 150°C

SFF2001G C0G

TSC America Inc.

DIODE, SUPER FAST, 20A, 50V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-3 Full Pack, Isolated Tab

Azione4.368

50V

20A

975mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

90pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

UGB8GTHE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione6.208

400V

8A

1.25V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

MBR1645HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

Azione7.040

45V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 45V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

MBRF1635HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-220-2 Full Pack, Isolated Tab

Azione3.072

35V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 35V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

VS-MBRB1035PBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione3.552

35V

10A

840mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 150°C

SR810 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione5.680

100V

8A

920mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

ES1HL RFG

TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 500V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione6.784

500V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 500V

8pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

TSS42L RWG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: 1005 (2512 Metric)

Azione6.800

30V

200A

650mV @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

5ns

500nA @ 25V

10pF @ 1V, 1MHz

Surface Mount

1005 (2512 Metric)

1005

-55°C ~ 125°C

SR109 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione7.888

90V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SDURD860TR

SMC Diode Solutions

DIODE GEN PURP 600V DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 8µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione6.352

600V

-

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

8µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

VS-12EWH06FN-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 12A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione21.126

600V

12A

2.5V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-65°C ~ 175°C

VS-30APF06-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-247-3

Azione7.812

600V

30A

1.41V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 600V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

1N5822US

Microsemi Corporation

DIODE SCHOTTKY 40V 3A B-MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: SQ-MELF, B

Azione7.008

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100mA @ 40V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 125°C

CPD200-CEN1384B-CT

Central Semiconductor Corp

BARE DIE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

SIDC30D60E6X1SA1

Infineon Technologies

DIODE GP 600V 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

600 V

75A

1.25 V @ 75 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

JANTX1N6080

Microchip Technology

DIODE GEN PURP 100V 12A G AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: G, Axial
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C

pacchetto: -

Request a Quote

100 V

12A

1.5 V @ 37.7 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 100 V

-

Through Hole

G, Axial

-65°C ~ 155°C

1N5407GH-A0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

800 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

25pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

JANS1N5616-TR

Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

400 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 400 V

-

Through Hole

A, Axial

-65°C ~ 200°C

RS1KH

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione45.000

800 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

FR102G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

100 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N4448W_R1_00001

Panjit International Inc.

DIODE GEN PURP 75V 150MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione79.242

75 V

150mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

2.5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

B320AE-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

20 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 20 V

140pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

MBR1040VL_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 1A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 450 µA @ 40 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: 125°C

pacchetto: -

Azione23.883

40 V

1A

360 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

450 µA @ 40 V

150pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

125°C