Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE GEN PURP 1.2KV 600MA WAFER
|
pacchetto: Die |
Azione2.448 |
|
1200V | 600mA (DC) | 1.6V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 400V 1A A-405
|
pacchetto: Axial, Radial Bend |
Azione5.216 |
|
400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | Axial, Radial Bend | A-405 | -55°C ~ 150°C |
||
Semtech Corporation |
DIODE GEN PURP 400V 5A AXIAL
|
pacchetto: Axial |
Azione5.184 |
|
400V | 5A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 400V | 90pF @ 10V, 1MHz | Through Hole | Axial | Axial | -55°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 1.5KV 500MA AXIAL
|
pacchetto: Axial |
Azione4.128 |
|
1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1500V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 2A, 200V,
|
pacchetto: DO-214AA, SMB |
Azione4.528 |
|
200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, FAST, 0.8A, 600V, 250NS,
|
pacchetto: DO-219AB |
Azione7.904 |
|
600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDTM
|
pacchetto: SOD-128 |
Azione3.104 |
|
60V | 3A | 560mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A D5B
|
pacchetto: SQ-MELF, B |
Azione7.616 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Micro Commercial Co |
DIODE SCHOTTKY 60V 8A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione51.366 |
|
60V | 8A | 650mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 400pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Microchip Technology |
DIODE SCHOTTKY 40V 30A TO204AA
|
pacchetto: - |
Request a Quote |
|
40 V | 30A | 700 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 40 V | - | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) | -65°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
1A, 20V, SCHOTTKY RECTIFIER
|
pacchetto: - |
Azione50.217 |
|
20 V | 1A | 290 mV @ 10 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 15 V | 29pF @ 5V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323F | -55°C ~ 125°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 60V 2A PMDU
|
pacchetto: - |
Azione10.401 |
|
60 V | 2A | 650 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 75 µA @ 60 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
||
Microchip Technology |
DIODE GEN PURP 200V 50A DO5
|
pacchetto: - |
Request a Quote |
|
200 V | 50A | 1.4 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A TS-1
|
pacchetto: - |
Azione14.925 |
|
300 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
80 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
80 V | 3A | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 80 V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
||
Micro Commercial Co |
DIODE GEN PURP 50V 1A DO41
|
pacchetto: - |
Request a Quote |
|
50 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 300V 1A DO41
|
pacchetto: - |
Request a Quote |
|
300 V | 1A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 mA @ 300 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 125°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 20V 350MA SOD123
|
pacchetto: - |
Request a Quote |
|
20 V | 350mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 10 V | 28pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1.5A DO214AC
|
pacchetto: - |
Request a Quote |
|
50 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 3.6A TO263AC
|
pacchetto: - |
Azione10.677 |
|
600 V | 3.6A | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 5 µA @ 600 V | 70pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 30V 800MA SOD323
|
pacchetto: - |
Request a Quote |
|
30 V | 800mA | 600 mV @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | Surface Mount | SC-90, SOD-323F | SOD-323 | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A TO277A
|
pacchetto: - |
Azione17.970 |
|
100 V | 3A | 930 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | 47pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD
|
pacchetto: - |
Azione7.500 |
|
600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A DO214AC
|
pacchetto: - |
Azione22.500 |
|
30 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Micro Commercial Co |
Interface
|
pacchetto: - |
Request a Quote |
|
400 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | - | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
||
Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A SOD123F
|
pacchetto: - |
Azione42.486 |
|
1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 6pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 800V 1A DO41
|
pacchetto: - |
Request a Quote |
|
800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 125°C |