Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE GEN PURP 1.7KV 200A WAFER
|
pacchetto: Die |
Azione2.368 |
|
1700V | 200A (DC) | 1.8V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.75A AXIAL
|
pacchetto: E, Axial |
Azione5.312 |
|
440V | 1.75A | 1.35V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Diodes Incorporated |
DIODE GEN PURP 600V 2A DO15
|
pacchetto: DO-204AC, DO-15, Axial |
Azione6.432 |
|
600V | 2A | 1.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 20V 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione18.528 |
|
20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 80V 2A SMB
|
pacchetto: DO-214AA, SMB |
Azione7.056 |
|
80V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7mA @ 80V | 75pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
||
Powerex Inc. |
DIODE GEN PURP 1.2KV 550A DO200
|
pacchetto: DO-200AA, A-PUK |
Azione5.376 |
|
1200V | 550A | 1.2V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 15µs | 50mA @ 1200V | - | Chassis, Stud Mount | DO-200AA, A-PUK | DO-200AA, R62 | -65°C ~ 150°C |
||
GeneSiC Semiconductor |
DIODE GEN PURP 800V 165A DO205AA
|
pacchetto: DO-205AA, DO-8, Stud |
Azione5.504 |
|
800V | 165A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 22mA @ 800V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 16A DO203AA
|
pacchetto: DO-203AA, DO-4, Stud |
Azione6.800 |
|
100V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 16A TO263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.960 |
|
50V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO220AC
|
pacchetto: TO-220-2 |
Azione3.056 |
|
200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V ITO220AB
|
pacchetto: TO-220-3 Isolated Tab |
Azione5.632 |
|
100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 1.5A DO204
|
pacchetto: DO-204AC, DO-15, Axial |
Azione3.072 |
|
1500V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 5µA @ 1500V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione6.864 |
|
20V | 1A | 750mV @ 3.1V | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 125pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
||
Comchip Technology |
DIODE SCHOTTKY 30V 100MA 1005
|
pacchetto: 1005 (2512 Metric) |
Azione3.344 |
|
30V | 100mA | 440mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 9pF @ 10V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150MW 60V SOD323
|
pacchetto: SC-76, SOD-323 |
Azione4.848 |
|
60V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
||
Comchip Technology |
DIODE GEN PURP 1KV 3A 2114
|
pacchetto: 2-SMD, No Lead |
Azione3.520 |
|
1000V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1000V | 23pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2114/DO-214AA | -65°C ~ 175°C |
||
Diodes Incorporated |
DIODE RECT STD 1000V 1A SOD123F
|
pacchetto: SOD-123F |
Azione25.926 |
|
1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 1000V | 3pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 125V 300MA D5B
|
pacchetto: D, Axial |
Azione13.050 |
|
125V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 125V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC
|
pacchetto: - |
Azione23.850 |
|
35 V | 7.5A | 840 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD123
|
pacchetto: - |
Azione36.240 |
|
30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 125°C |
||
MDD |
DIODE GEN PURP 400V 1A SOD123FL
|
pacchetto: - |
Request a Quote |
|
400 V | 1A | - | - | - | - | 8pF @ 4V, 1MHz | Surface Mount | SOD-123FL | SOD-123FL | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 600V 1A SOD123FL
|
pacchetto: - |
Azione14.844 |
|
600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200MA DO35
|
pacchetto: - |
Request a Quote |
|
30 V | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 25 V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 30V 30MA SOD323
|
pacchetto: - |
Azione106.722 |
|
30 V | 30mA | 370 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 500 nA @ 30 V | 2.5pF @ 1V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323 | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 30A DIE
|
pacchetto: - |
Request a Quote |
|
600 V | 30A | 1.25 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -55°C ~ 150°C |
||
Microchip Technology |
DIODE SCHOTTKY 100V 75A THINKEY4
|
pacchetto: - |
Request a Quote |
|
100 V | 75A | 920 mV @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Surface Mount | ThinKey™4 | ThinKey™4 | -55°C ~ 175°C |
||
Microchip Technology |
DIODE GP 180V 200MA DO213AA
|
pacchetto: - |
Request a Quote |
|
180 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | - | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO214AC
|
pacchetto: - |
Azione44.970 |
|
20 V | 1A | 390 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |