Prodotti Diodes Incorporated

FD3330022

Diodes Incorporated

OSCILLATOR XO 33.333MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 33.333MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

pacchetto: 4-SMD, No Lead

DMN2011UFDF-13

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

pacchetto: 6-UDFN Exposed Pad

DMP2170U-7

Diodes Incorporated

MOSFET PCH 20V 3.1A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 780mW (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

DDTD123YC-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

MMDT5551-7-F

Diodes Incorporated

TRANS 2NPN 160V 0.2A SOT363

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 160V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

ZDT1053TA

Diodes Incorporated

TRANS 2NPN 75V 5A SM8

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 75V
• Vce Saturation (Max) @ Ib, Ic: 440mV @ 250mA, 5A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 2.75W
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

pacchetto: SOT-223-8

ZMV829BTA

Diodes Incorporated

DIODE VAR CAP 8.2PF 25V SOD-323

• Capacitance @ Vr, F: 8.61pF @ 2V, 1MHz
• Capacitance Ratio: 5.8
• Capacitance Ratio Condition: C2/C20
• Voltage - Peak Reverse (Max): 25V
• Diode Type: Single
• Q @ Vr, F: 250 @ 3V, 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

pacchetto: SC-76, SOD-323

SF30AG-B

Diodes Incorporated

DIODE GEN PURP 50V 3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-201AD, Axial

B360-13

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

SBR15U50SP5-13

Diodes Incorporated

DIODE SBR 50V 15A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: PowerDI? 5

SBG1645CT-T-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AZ1084CD-1.5TRG1

Diodes Incorporated

IC REG LINEAR 1.5V 5A TO252-2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.5V @ 4.5A
• Current - Output: 5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 72dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

AP7365-28YRG-13

Diodes Incorporated

IC REG LIN 2.8V 600MA SOT89R-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89R-3

pacchetto: TO-243AA

AUR9703AGH

Diodes Incorporated

IC REG BUCK ADJ 0.8A SYNC TSOT25

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.5V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): 3.3V
• Current - Output: 800mA
• Frequency - Switching: 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 80°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5 Thin, TSOT-23-5
• Supplier Device Package: TSOT-23-5

pacchetto: SOT-23-5 Thin, TSOT-23-5

ZXRE060AH5TA

Diodes Incorporated

IC VREF SHUNT ADJ SC70

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 0.2V
• Voltage - Output (Max): 18V
• Current - Output: 15mA
• Tolerance: ±0.5%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 300µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

pacchetto: 5-TSSOP, SC-70-5, SOT-353

BCR421UW6Q-7

Diodes Incorporated

TRANSISTOR LED DRIVER SOT26 T&R

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 1.4V
• Voltage - Supply (Max): 40V
• Voltage - Output: 40V
• Current - Output / Channel: 350mA
• Frequency: -
• Dimming: PWM
• Applications: Automotive, Lighting
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

pacchetto: SOT-23-6

PI6C490098LEX-2017

Diodes Incorporated

CLOCK GENERATOR TSSOP-16

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

AH3390Q-SA-7

Diodes Incorporated

MAGNETIC SWITCH UNIPOLAR SOT23-3

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 21mT Trip, 18.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 60mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

PT7C5009AL2-2WF

Diodes Incorporated

XOIC WAFER

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TT4JL

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TTL T&R

• Diode Type: -
• Technology: -
• Voltage - Peak Reverse (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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1SS355-7

Diodes Incorporated

DIODE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 80 V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 150°C

pacchetto: -

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DMN2050LQ-7

Diodes Incorporated

MOSFET N-CH 20V 5.9A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.4W
• Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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DMN3028LQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 860mW (Ta)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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DDTC114ECAQ-7-F

Diodes Incorporated

TRANS PREBIAS NPN 50V SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: -

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DMN6041SVTQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: -

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DMN4027SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 5.4A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
• Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
• Power - Max: 1.25W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacchetto: -

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FZT489QTA

Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 30 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
• Power - Max: 3 W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3

pacchetto: -

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DBF310-13

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 3A DBF

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 3 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: DBF

pacchetto: -