Prodotti Diodes Incorporated

ZVN4310ASTZ

Diodes Incorporated

MOSFET N-CH 100V 0.9A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 850mW (Ta)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

pacchetto: E-Line-3

ZVN2106GTC

Diodes Incorporated

MOSFET N-CH 60V 0.71A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 710mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacchetto: TO-261-4, TO-261AA

DMN3024LSS-13

Diodes Incorporated

MOSFET N-CH 30V 6.4A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

FMMT620TC

Diodes Incorporated

TRANS NPN 80V 1.5A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

MMDT3904V-7

Diodes Incorporated

TRANS 2NPN 40V 0.2A SOT563

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

pacchetto: SOT-563, SOT-666

DDZ9697Q-7

Diodes Incorporated

DIODE ZENER SOD123

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 100nA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

AZ23C4V7-7

Diodes Incorporated

DIODE ZENER ARRAY 4.7V SOT23-3

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 78 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

BZX84C27S-7-F

Diodes Incorporated

DIODE ZENER ARRAY 27V SOT363

• Configuration: 2 Independent
• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

UF5A400D1

Diodes Incorporated

DIODE GEN PURP 400V 5A TO252-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 50pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-3
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

B140Q-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-214AC, SMA

AP7215-33SG-13

Diodes Incorporated

IC REG LINEAR 3.3V 600MA 8SOP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.25V @ 100mA
• Current - Output: 600mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 55dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

AZ431LBKTR-G1

Diodes Incorporated

IC VREF SHUNT ADJ SOT25

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 18V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: 20ppm/°C Typical
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 80µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

pacchetto: SC-74A, SOT-753

PT8A3301AWE

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PI3C3245QE-2017

Diodes Incorporated

BUS SWITCH 3V QSOP-20

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

PI74LCX16374AE

Diodes Incorporated

IC D-TYPE POS TRG DUAL 48TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 2
• Number of Bits per Element: 8
• Clock Frequency: 170MHz
• Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Iq): 10µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)

pacchetto: 48-TFSOP (0.240", 6.10mm Width)

PI6C2501AWE

Diodes Incorporated

IC PLL CLOCK DRIVER 8-SOIC

• Type: PLL Clock Driver
• PLL: Yes with Bypass
• Input: CMOS
• Output: CMOS
• Number of Circuits: 1
• Ratio - Input:Output: 1:1
• Differential - Input:Output: No/No
• Frequency - Max: 134MHz
• Divider/Multiplier: No/No
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

SMCJ8.0A-13

Diodes Incorporated

TVS DIODE 8VWM 13.6VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8V
• Voltage - Breakdown (Min): 8.89V
• Voltage - Clamping (Max) @ Ipp: 13.6V
• Current - Peak Pulse (10/1000µs): 110.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

pacchetto: DO-214AB, SMC

PI7C9X20505GPBEVB

Diodes Incorporated

PI7C9X20505GPB EVAL BOARD

• Applications: -
• Interface: -
• Voltage - Supply: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

pacchetto: -

BSS138WQ-13-F

Diodes Incorporated

BSS FAMILY SOT323 T&R 10K

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

pacchetto: -

Request a Quote

G40H100CTFW

Diodes Incorporated

DIODE ARR SCHOTT 100V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

pacchetto: -

BCV47TC

Diodes Incorporated

TRANSISTOR DARL NPN SOT23-3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 330 mW
• Frequency - Transition: 170MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacchetto: -

DMN3732UFB4-7B

Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN1006

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 490mW (Ta)
• Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

pacchetto: -

Request a Quote

PI3EQX2024ZTFEX

Diodes Incorporated

USB3 EQX U-QFN2545-34 T&R 3.5K

• Type: Buffer, ReDriver
• Applications: USB
• Input: CML
• Output: CML
• Data Rate (Max): 10Gbps
• Number of Channels: 4
• Delay Time: -
• Signal Conditioning: Input Equalization
• Capacitance - Input: -
• Voltage - Supply: 3V ~ 3.6V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-UFQFN Exposed Pad
• Supplier Device Package: 34-UTQFN (2.5x4.5)

pacchetto: -

DMP26M1UFG-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1.67W (Ta), 3W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

pacchetto: -

Request a Quote

APT13003DU-E1

Diodes Incorporated

TRANS NPN DARL 450V 1.5A TO126

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5 A
• Voltage - Collector Emitter Breakdown (Max): 450 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
• Power - Max: 1.1 W
• Frequency - Transition: 4MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126

pacchetto: -

Request a Quote

ZXMS82120S14P-13

Diodes Incorporated

HIGH SIDE INTELLIFET SO-14EP T&R

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 2 x 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 5V ~ 28V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.5A
• Rds On (Typ): 100mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 14-SO-EP

pacchetto: -

Request a Quote

DMN10H6D2LFDB-13

Diodes Incorporated

MOSFET 2N-CH 100V 0.27A 6UDFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
• Power - Max: 700mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

pacchetto: -

Request a Quote

DMC2710UV-7

Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
• Power - Max: 460mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

pacchetto: -