Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated |
MOSFET 2N-CH 20V 4.7A 6UDFN
|
pacchetto: 6-UDFN Exposed Pad |
Azione2.688 |
|
Standard | 20V | 4.7A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
||
Diodes Incorporated |
MOSFET 2P-CH 30V 5.7A 8SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione466.992 |
|
Logic Level Gate | 30V | 5.7A | 25 mOhm @ 7.1A, 10V | 3V @ 250µA | 31.6nC @ 10V | 1678pF @ 15V | 1.81W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |