New Yorker Electronics has released its new Innodisk industrial-grade DDR5 DRAM module. The module complies with all relevant JEDEC standards and is available in 16GB and 32GB capacities at 4800 t/s. And jesD79-5 DDR5 SDRAM has significant improvements in capacity, speed, voltage and ECC function.
DDR5 specifications feature up to four times the capacity, increasing the maximum capacity of each chip to 64GB, bringing the maximum potential capacity of a single DDR5 DIMM up to 128GB. DDR5 DRAM theoretically has a maximum transmission speed of 6,400Mt /s, twice that of its predecessor DDR4. In addition, the voltage was reduced from 1.2V to 1.1V, reducing the total power consumption.
For DDR5 dimMs, each DIMM has two 40-bit channels (32-bit data bits, and each ECC bit has eight bits). The same data total has more ECC bits. Two smaller independent channels improve memory access efficiency, faster and more efficient. Innodisk currently offers up to 32GB and 4800MT/s DDR5. Another structural change is the transfer of power management to DIMMs, reducing the redundant power management circuits in unused DIMM slots on the motherboard.
Typical application areas include industrial/embedded, surveillance, automation and healthcare.
