Data di Pubblicazione: 2015-09-24
Toshiba has launched its new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. This structure stacks flash memory cells vertically on a silicon substrate. Compared with the planar NAND flash memory on which cells are formed, it achieves Significant density increase. Silicon substrate. The company said that the new device is the world's first 256 GB (32 GB) 48-layer BiCS device and also deployed industry-leading 3 bit per unit (three-layer cell, TLC) technology.
BiCS FLASH is based on a leading 48-layer stacking process, which exceeds the capacity of mainstream 2D NAND flash memories, while enhancing write / erase reliability and increasing write speed. The new 256Gb devices are suitable for a variety of applications, including consumer SSDs, smartphones, tablets and memory cards, and enterprise SSDs for data centers.
Since the release of the BiCS FLASH prototype technology in June 2007, Toshiba has continued to develop in the direction of mass production optimization. In order to meet the further growth of the flash memory market in 2016 and beyond, Toshiba will launch a product portfolio that emphasizes large-capacity applications such as solid-state drives to actively promote the migration to BiCS FLASH. The company said that sample shipments will begin in September.
