Navitas semiconductor has provided a new electric vehicle design center in order to further expand to the higher power Gan market. Ga-based OBCS are expected to charge up to three times faster and use 70 percent less energy than conventional silicon cells. It is estimated that GaN OBCs, DC-DC converters and traction inverters will extend the range of electric vehicles or reduce battery costs by 5%, and accelerate the worldwide adoption of electric vehicles by 3 years. Upgrading electric vehicles to gallium nitride is expected to reduce co2 emissions from the road sector by 20 per cent per year by 2050, as targeted by the Paris Agreement.
GaN devices are at the forefront of power semiconductor technology, running up to 20 times faster than conventional silicon chips. Navitas' GaNFast power integrated circuit combines GaN power supply, GaN drive, protection and control. High-speed and efficient conversion into energy saving, low cost, high power density, high reliability of the industry's new benchmark.
Mr. Hao Sun, a respected industry expert and new senior director of Shanghai Design Center, said, "The Design Center will develop schematics, layouts and firmware for fully functional electric vehicle powertrains and produce electric vehicle powertrains. Navitas will partner with OBC, DC-DC and Traction Systems to create innovative, world-class solutions with the highest power density and efficiency to propel GaN into the mainstream mobile space."
"The Navitas electric vehicle team has a wealth of talent and proven power system delivery experience," said Charles ZHA, Vice president and General manager of Navitas China. "Mobility is an exciting expansion market for GaN, with an estimated potential content value of $250 per ev. Navitas is rapidly advancing high-power applications, such as electric vehicles, data centers and solar power, market by market."
