Magnachip Semiconductor has introduced 11 new generation 600V high voltage SJ MOSFets.
The new 2.5-generation (2.5g) 600V SJ MOSFET is created with a new design based on the latest process technology and offers over 10% improved switching functionality compared to previous generations. Therefore, it provides lower switching losses and better power efficiency. For applications requiring high ESD durability, zener diodes are embedded between the gate and source to avoid external surges or ESD damage to the MOSFET.
These new 2.5g products can be used in a wide range of products and applications including TVS, lighting infrastructure, fast chargers, adapters, PC power and industrial power. They are also ideal for hard - and soft-switch topologies. The new product family supports Rds(ON) of 190-580 Mohm and is offered in standard packages such as DPAK TO-220F and TO-220SF.
Said YJ Kim, Magnachip's chief executive. "We will continue to develop advanced power solutions, such as high-voltage SJ MOSFET for automotive, to expand our portfolio and bring new capabilities to more applications." "With industry-proven technology and products, Magnachip meets the latest design requirements for consumer and industrial markets,"
