Infineon Technologies has released a new CoolSiC technology: CoolSiC MOSFET 1200V M1H. The M1H chip offers high flexibility and is suitable for solar systems such as inverters that must meet peak demand. The chip also has excellent applications in electric vehicle fast charging, energy storage systems and other industrial applications. And advanced SiC chips will be implemented in a widely expanded portfolio using the Easy module family, as well as discrete packages using .xt interconnect technology.
Recent advances in CoolSiC's underlying technology allow for an exceptionally large gate operating window, improving on-resistance for a given die size. At the same time, the larger gate operating window provides high robustness to gate driver and layout related voltage peaks, without limitation, even at higher switching frequencies. Along with the M1H chip technology, the associated housing has been adopted in technology and package variants, allowing for higher power density and more options, improving application performance for design engineers.
The introduction of new chip sizes maximizes flexibility and offers the broadest industrial portfolio. With this chip, the on-resistance of the module can be significantly improved, making the device more reliable and efficient. And the device will be integrated into the Easy series, further enhancing the Easy 1B and 2B modules. In addition, a new product that enhances Easy 3B modules with new MOSFETs will be introduced
The new device has a simple design, mainly due to gate voltage overshoot and undershoot, a new maximum gate-source voltage down to -10V, and avalanche and short-circuit capability specifications. In addition to the Easy module family, the M1H portfolio includes the new ultra-low pass resistors 7mOhm, 14mOhm and 20mOhm in the TO247-3 and TO247-4 discrete packages.
With the rapid implementation of clean energy and energy efficiency worldwide, the newly added components further enhance the optimization potential of sic-based applications.
