STMicroelectronics - Power MOSFETs for high-efficiency and high power density applications (SCTx0N120) | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 706
Language Translation

* Please refer to the English Version as our Official Version.

STMicroelectronics - Power MOSFETs for high-efficiency and high power density applications (SCTx0N120)

Technology Cover
Data di Pubblicazione: 2015-06-15, STMicroelectronics
Designed for applications such as solar inverters, UPS systems, motor drivers, high voltage DC-DC converters, and switch mode power supplies-STMicroelectronics SCTx0N120 silicon carbide power MOSFETs. MOSFETs are produced using advanced and innovative wide bandgap materials. This results in an unparalleled on-resistance per unit area, and the switching performance is virtually unaffected by temperature. The outstanding thermal performance of SiC materials and the proprietary HiP247 package allow designers to use industry-standard profiles with significantly improved thermal performance. These features make the device ideal for high efficiency and high power density applications.