Qorvo introduces seven 750V Silicon Carbide (SiC) FETs in a surface mount D2PAK-7L package. With this package option, Qorvo's SiC FETs can be used for on-board chargers, soft-switching DC/DC converters, battery charging (fast DC and Tailored to fast-growing applications such as IT/server power supplies, it can provide better solutions for high-power applications with higher efficiency, lower conduction losses and superior cost-effectiveness in thermally enhanced packages.
Qorvo's fourth-generation UJ4C/SC series features the industry's lowest RDS(on) of 9mΩ at 650/750V, with ratings of 9, 11, 18, 23, 33, 44 and 60mΩ. This broad selection provides engineers with more device options and greater flexibility to achieve a better cost/efficiency balance, while maintaining adequate design redundancy and circuit robustness. Utilizing unique cascode SiC FET technology, where normally-on SiC JFETs are co-packaged with Si MOSFETs to create normally-off SiC FETs, these devices offer best-in-class RDS x A figures of merit, enabling The chip achieves lower conduction losses.
"The D2PAK-7L package reduces the inductance of the compact internal connection loop, which, along with the included Kelvin source connection, reduces switching losses, enabling higher operating frequencies and higher System power density. These devices also feature silver-sinter die attach technology for very low thermal resistance to maximize heat dissipation through standard PCBs and IMS substrates with liquid cooling.”
