Nexperia, a high yield production specialist in basic semiconductor devices, announced the launch of its first E-mode (enhanced) power GaN FeTs supporting low voltage (100/150 V) and high voltage (650 V) applications. Nexperia has added seven new E-mode devices to its cascading GaN nitride product portfolio, providing designers with the best options from gan FeTs to other silicon-based power devices.
These new devices further expand Nexperia's extensive GaN FeTs product line, suitable for a variety of power conversion applications. The product portfolio includes cascade devices for high voltage and high power applications, 650 V E-mode devices for high voltage and low power applications, and 100/150 V E-mode devices for low voltage and high power applications. In addition, the Nexperia E-mode GaN FeTs are manufactured on an 8-inch wafer line to increase capacity and meet industrial JEDEC standards.
Nexperia's new offerings include the E-mode GaN FeTs (RDS(on) between 80 and 190 mΩ at a fixed voltage of 650 V) in both DFN 5x6 mm and 8x8 mm packages. These products are available at high voltages (＜650 V), improve power conversion efficiency in low-power data communications/telecommunications, consumer charging, solar and industrial applications, and can also be used in high-precision brushless DC motors and compact server designs for higher torque and power.
Nexperia also offers 100 V (3.2 mΩ) GaN Fets in WLCSP8 and 150 V (7 mΩ) GaN FeTs in FCLGA. These devices are suitable for a variety of low voltages (< 150 V), high power applications, such as efficient DC-DC converters for data centers, fast charging (e-mobility and USB-C classes), small size LiDAR transceivers, low noise Class D audio amplifiers, and higher power density consumer devices such as mobile phones, laptops, and game consoles.
In many power conversion applications, GaN FeTs achieve higher power efficiency with their compact solution size, resulting in significantly lower material (BOM) costs. As a result, GaN devices are increasingly used in a wide range of mainstream power electronics markets, including server computing, industrial automation, consumer applications, and telecommunications infrastructure. GaN based devices with fast conversion/switching capabilities (high dv/dt and di/dt) provide excellent efficiency in both low and high power conversion applications. Nexperia's E-mode GaN FeTs have excellent switching performance, thanks to extremely low Qg and QOSS values, and low RDS(on) contribute to a higher power efficiency design.
