Littelfuse has introduced two second-generation 650V, AEC-Q101 qualified SiC Schottky diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA series SiC Schottky diodes offer a variety of current ratings (6A, 8A, 10A, 16A, or 20A). They provide power electronics system designers with multiple performance advantages, including high surge capability, negligible reverse recovery current, and a maximum operating junction temperature of 175C, making them ideal for applications requiring reliability, enhanced efficiency, and thermal management.
Compared to standard silicon PN junction diodes, this series supports a significant reduction in switching losses and a significant increase in the efficiency and durability of power electronics systems. Compared to Si-based solutions, they can provide a smaller heat sink and a smaller system footprint because they dissipate less energy and can operate at higher junction temperatures. This gives end users all the advantages of a more compact and energy efficient system, as well as the potential to reduce total cost of ownership.
Typical applications for this device include PFC, buck / boost stages in DC-DC converters, freewheeling diodes in inverter stages, high-frequency output rectification, and electric vehicle (EV) applications.
"These new series are our first 650V SiC Schottky diode products; all our previous versions were 1200V rated devices, so we can now handle a wider range of applications and further refine Littelfuse's SiC MOSFET portfolio," Littelfuse Christophe Warin, Silicon Carbide Product Marketing Manager, Semiconductor Business Unit. "Their AEC-Q101 qualification makes these diodes better than similar devices in terms of quality and reliability."
