High-efficiency super-junction MOSFETs provide increased power density | Heisener Electronics
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High-efficiency super-junction MOSFETs provide increased power density

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Data di Pubblicazione: 2019-05-26, STMicroelectronics
STMicroelectronics' MDmesh M6 series super junction transistors can achieve high efficiency in medium power resonance and hard switching converter topologies. MDmesh M6 series MOSFETs can improve battery chargers, PC power supplies, LED drivers, power adapters, telecommunications And server power and solar micro inverters. MOSFETs provide high efficiency performance to increase power density. This family can achieve gate charges as low as 18nC and has an optimized capacitance curve to target the high efficiency targets of the new topology in power conversion applications. The company's M6 superjunction technology helps reduce RDS (ON) to 0.036 Ohms, further improving efficiency. The threshold voltage of the MOSFET provides a rated current of 8A to 72A and a breakdown voltage of 600V to 700V. It is optimized for soft switching, making it ideal for LLC resonant converters and Boost-PFC converters. MOSFETs offer a variety of packaging options, including TO-LL packaging solutions that enable effective thermal management with a 30% smaller footprint compared to other packages.

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