Diodes Incorporated introduced the DGD0579U high-side and low-side gate drivers. The high-frequency device has built-in bootstrapped diodes that can drive two N-channel MOSFets in a half-bridge configuration commonly used for motor control and DC-DC power transfer functions. It targets high-power applications such as wireless power tools, electric bicycles and autonomous robotic appliances, increasing the need for higher efficiency levels and more compact.
Its 100V floating high-end driver provides greater flexibility for demanding high-power applications. Shorter propagation delays (typically 60ns) and delay matching (up to 10ns) enable higher switching speeds and reduced dead zone times, leading to smaller, more efficient power systems.
These mechanisms include preventing cross conduction so that high - and low-side MOSFets do not open at the same time, and addressing potential supply losses. Advanced MOSFET protection mechanisms are integrated directly into the device, improving system reliability, optimizing board space usage, and reducing the number of components compared to traditional discrete solutions.
The device provides enable pins for power management and ultra low (< 1μA) standby current, help prolong battery running time. Compatible with control signals from microcontrollers and PWM controller ics, it supports TTL and CMOS logic level inputs (as low as 3.3V).
The gate driver comes in a compact w-dfn3030-10 package with a footprint of 3mm x 3mm and a profile height of 0.75mm.
