EPC Corporation announced the EPC7007, a 200 V, 25 mΩ, 80 APulsed radiation-hardened GaN FET. Sizes as small as 5.76 mm2, its total dose rating is greater than 1 Mrad, and the linear energy transfer (LET) single event effect (SEE) immunity is 85 MeV/(mg/cm2). Same as the commercial eGaN FET and IC family, in chip-scale packaging. Packaged devices will be provided by EPC Space.
Compared to an equivalent rad-hard silicon device with the same on-resistance, the EPC7007 has 40 times smaller QG and QGD, zero reverse recovery (QRR), and 40 times smaller size. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and ultra-low on-resistance, GaN power devices significantly outperform silicon-based devices, enabling higher switching frequencies for demanding aerospace missions, enabling higher power density, higher efficiency, smaller and lighter circuits. Solutions based on GaN devices can operate at higher total radiation, SEE and LET levels than silicon solutions.
Applications that benefit from the high performance of the EPC7007 include DC/DC power supplies, motor drives, lidar, deep exploration, and ion thrusters for aerospace applications, satellites and avionics.
"EPC's gallium nitride technology enables next-generation power conversion and motor drives in aerospace applications with higher operating frequencies, higher efficiency and higher power density, which are the key features of EPC's GaN technology," said Alex Lidow, CEO and co-founder of EPC. Not possible before. The EPC7007 extends the voltage range of our radiation tolerant product family to 200 V. The EPC7007 offers designers a much smaller and lower cost solution than silicon solutions.”
