EPC and ADI team up to launch GaN FET-based DC/DC converter | Heisener Electronics
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EPC and ADI team up to launch GaN FET-based DC/DC converter

Technology Cover
Data di Pubblicazione: 2022-07-21, EPC

     EPC and Analog Devices have introduced a reference design that uses a new, fully optimized analog controller to drive EPC's Gallium Nitride Field Effect Transistor (GaN FET). The new analog LTC7890 synchronous GaN buck controller, combined with EPC's ultra-efficient eGaN® FETs, enables switching frequencies up to 2 MHz for high power density and low cost DC/DC conversion.

      EPC Power Conversion Corporation (EPC) announces the EPC9160, a dual-output synchronous buck converter reference design that switches at 2 MHz and converts input voltages from 9 V to 24 V to 3.3 V or 5 V Output voltage, continuous current up to 15 A for both outputs. Due to the high switching frequency, the size of the converter is very small, both outputs are only 23 mm x 22 mm and the thickness of the inductor is only 3 mm.

      With high power density, low profile and 2 MHz switching frequency, this solution is ideal for automotive console applications and computing, industrial, consumer and telecom power systems that require a small, thin solution. eGaN® FETs offer fast switching, high efficiency and small size to meet the stringent requirements for high power density in these leading edge applications.the EPC9160 reference design features an enhancement-mode GaN FET (EPC2055) and a two-phase analog buck controller (LTC7890) with a GaN integrated driver.

       The 100 V, low Iq, dual, two-phase synchronous buck controller (LTC7890) is fully optimized to drive EPC's eGaN FETs and integrates a half-bridge driver and smart bootstrap diodes. The optimized or programmable dead time is close to zero and the switching frequency can be up to 3 MHz. Quiescent current of 5 uA (VIN = 48 V, VOUT = 5 V, CH1 only) enables very low standby power consumption and excellent light load efficiency.

        The 40 V eGaN FET (EPC2055) achieves 3 mOhm maximum on-resistance, 6.6 nC QG, 0.7 nC QGD, 1.3 nC QOSS, and zero reverse recovery (QRR) in an ultra-small size (2.5 mm x 1.5 mm) Provides up to 29 A continuous current and 161 A peak current. The superior dynamic parameters enable very small switching losses at 2 MHz switching frequency.EPC9160 efficiency exceeds 93% at 5 V output and 24 V input. In addition to light load operation mode and adjustable dead time, the board also provides undervoltage lockout, overcurrent protection and power good output.

    "GaN FETs have the advantage of ultra-low switching losses, allowing them to operate at frequencies above 2 MHz," said Alex Lidow, CEO of EPC Power Conversion. "With the new analog controller, customers can achieve 2 MHz. The entire ecosystem above operating frequency. We are excited to partner with Analog Devices to combine the benefits of its advanced controllers with the superior performance of EPC GaN devices to provide customers with solutions with the highest power density and fewer components, Can improve efficiency, increase power density and reduce system cost".

       "The LTC7890 design from Analog Devices leverages the benefits of EPC eGaN FETs for high power density solutions," said Tae Han, senior product marketing manager at Analog Devices. Compared to existing solutions, the performance is higher and the power consumption is lower. With these new controllers, customers can take advantage of the extremely fast switching of GaN devices and achieve the highest power density."

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