EPC launched a new 100 V, 3.8 m Ω GaN FET EPC2306, which provides higher performance and smaller solutions for high power density applications, including DC/DC conversion, AC/DC charger, solar optimizer and micro inverter, motor driver and Class D audio amplifier applications.
The EPC2306 is package compatible with the previous 100 V and 1.8 mOhm EPC2302, which allows design engineers to balance the on resistance with the price, and to be compatible with the package sizes of the two devices in the same PCB layout, so that efficiency or cost optimization solutions can be achieved.
Alex Lidow, CEO and co-founder of EPC, said: "EPC2306 combines the advantages of 100 V GaN FET and the QFN package that is easy to assemble without degrading performance. Designers can use our packaging GaN FET series to achieve lighter, battery powered BLDC motor drivers for electric vehicles and UAVs; more efficient 48 V input DC/DC converters for data centers, data communications, artificial intelligence, and other industrial and consumer applications."
The new 100 V EPC2306 with heat resistant enhanced QFN packaging, 48 V DC/DC conversion for high-density computing applications, 48 V BLDC motor drivers for electric vehicles and robots, solar optimizers and micro inverters, and Class D audio amplifiers are introduced. The EPC2306 GaN FET has a very small on resistance (only 3.8 mOhm) and very small QG, QGD and QOSS parameters, which can achieve low on and off losses. It is packaged with heat resistant and enhanced QFN and heats from the top. Its board area is only 3 mm x 5 mm, providing a super miniaturized solution for the highest power density applications.
