Integra Technologies has released GaN-on-SiC Transistors for S-band Radar

IGT2731M130 is a 50-ohm matched high-power GaN HEMT transistor that provides a peak pulse power of at least 130 W, a gain of 13.5 dB, and a drain efficiency of 55% under pulse conditions of 300 microseconds / 10% duty cycle . cycle. It operates in the transient operating frequency range of 2.7 to 3.1 GHz and is a depletion mode device. It requires negative gate bias voltage and bias sequencing. The IGT3135M135 operates in the instantaneous operating frequency range from 3.1 to 3.5 GHz and can provide peak pulse power up to 135 W. This transistor is also a 50 ohm matched high power GaN HEMT transistor, and it is also a depletion device that requires a negative gate bias voltage and bias sequencing. Both products are housed in Integra's PL44A1 package, measuring 0.800 inches (20.32 mm) wide and 0.400 inches (10.16 mm) long. Without ears, they are 0.400 inches (10.16 mm) wide and 0.400 inches (10.16 mm) long. Both units are assembled using chip and wire technology using a gold metallization process, and they are both housed in a metal-based package and sealed with a ceramic epoxy cover.