Prodotti Vishay Semiconductor Diodes Division

VS-ST300C12L1

Vishay Semiconductor Diodes Division

SCR 1200V 1290A B-PUK

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 2.18V
• Current - On State (It (AV)) (Max): 650A
• Current - On State (It (RMS)) (Max): 1290A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 50mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 6730A, 7040A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, E-PUK
• Supplier Device Package: TO-200AB (E-Puk)

pacchetto: TO-200AB, E-PUK

VS-ST083S08PFM0

Vishay Semiconductor Diodes Division

SCR INVERTER 800V 85A TO-94

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 2.15V
• Current - On State (It (AV)) (Max): 85A
• Current - On State (It (RMS)) (Max): 135A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 30mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2450A, 2560A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AC, TO-94-4, Stud
• Supplier Device Package: TO-209AC (TO-94)

pacchetto: TO-209AC, TO-94-4, Stud

IRKT162/08

Vishay Semiconductor Diodes Division

SCR DBL HISCR 800V 160A INTAPAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 160A
• Current - On State (It (RMS)) (Max): 355A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)

pacchetto: INT-A-PAK (3 + 4)

VS-VSKL142/08PBF

Vishay Semiconductor Diodes Division

MODULE DIODE 140A INT-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 140A
• Current - On State (It (RMS)) (Max): 310A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4712A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)

pacchetto: INT-A-PAK (3 + 4)

VLZ6V8A-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 6.46V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 6.46V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

pacchetto: SOD-80 Variant

BZT52C4V3-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacchetto: SOD-123

TZS4679-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 2V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

pacchetto: SOD-80 Variant

AZ23B8V2-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

DZ23C30-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 22.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

VS-60CPF04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 180ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-247-3

SE15PJ-E3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 900ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-220AA

RGP02-18EHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.8KV 500MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 5µA @ 1800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

VS-SD403C08S10C

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 430A D200AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 430A
• Voltage - Forward (Vf) (Max) @ If: 1.83V @ 1350A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1µs
• Current - Reverse Leakage @ Vr: 35mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: DO-200AA, PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AA, A-PUK

VS-8TQ100SHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 80V
• Capacitance @ Vr, F: 500pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AU3PG-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.7A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 72pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

AR3PK-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.6A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 34pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-277, 3-PowerDFN

UH1PD-M3/85A

Vishay Semiconductor Diodes Division

DIODE 1A 200V 25NS SMD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-220AA

1N4007-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

BAQ35-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 140V 200MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 140V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1nA @ 60V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-213AC, MINI-MELF, SOD-80

VS-MURD620CTTRR-M3

Vishay Semiconductor Diodes Division

DIODE STANDARD 200V 3A DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

B40C1500G-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 1.5A 65V WOG

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 65V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 10µA @ 65V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Circular, WOG
• Supplier Device Package: WOG

pacchetto: 4-Circular, WOG

BU1006-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, BU
• Supplier Device Package: isoCINK+? BU

pacchetto: 4-SIP, BU

SMA5J13CHE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 13VWM 23.8VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 23.8V
• Current - Peak Pulse (10/1000µs): 21A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

P4KE510A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 434VWM 698VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 434V
• Voltage - Breakdown (Min): 485V
• Voltage - Clamping (Max) @ Ipp: 698V
• Current - Peak Pulse (10/1000µs): 570mA
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

SMCJ26CAHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 26VWM 42.1VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 42.1V
• Current - Peak Pulse (10/1000µs): 35.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC

SMAJ550HE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 495VWM 760VC DO214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 495V
• Voltage - Breakdown (Min): 550V
• Voltage - Clamping (Max) @ Ipp: 760V
• Current - Peak Pulse (10/1000µs): 400mA
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

SMA5J9.0A-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 9VWM 15.4VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 32.5A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

SMAJ120A-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 120VWM 193VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 1.6A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA