Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione2.864 |
|
400V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione2.800 |
|
400V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione7.808 |
|
200V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione6.352 |
|
200V | 1.8A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 80A TO247AC
|
pacchetto: TO-247-3 |
Azione2.100 |
|
800V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC
|
pacchetto: TO-247-3 |
Azione7.632 |
|
1200V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 80A TO247AC
|
pacchetto: TO-247-3 |
Azione7.472 |
|
600V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC
|
pacchetto: TO-247-3 |
Azione3.136 |
|
1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC
|
pacchetto: TO-247-3 |
Azione6.304 |
|
400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC
|
pacchetto: TO-247-3 |
Azione6.912 |
|
200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC
|
pacchetto: TO-247-3 |
Azione2.624 |
|
1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 80A TO247AC
|
pacchetto: TO-247-3 |
Azione5.344 |
|
1000V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC
|
pacchetto: TO-247-3 |
Azione6.560 |
|
400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC
|
pacchetto: TO-247-3 |
Azione6.880 |
|
200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC
|
pacchetto: TO-247-3 |
Azione6.512 |
|
1000V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC
|
pacchetto: TO-247-3 |
Azione6.416 |
|
600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC
|
pacchetto: TO-247-3 |
Azione7.792 |
|
400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC
|
pacchetto: TO-247-3 |
Azione2.048 |
|
1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC
|
pacchetto: TO-247-3 |
Azione6.672 |
|
600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC
|
pacchetto: TO-247-3 |
Azione3.056 |
|
200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC
|
pacchetto: TO-247-3 |
Azione5.872 |
|
1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5A DO204AR
|
pacchetto: DO-204AR, Axial |
Azione2.784 |
|
100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 100V | - | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A ITO220AC
|
pacchetto: TO-220-2 Full Pack, Isolated Tab |
Azione3.920 |
|
30V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A ITO220AC
|
pacchetto: TO-220-2 Full Pack, Isolated Tab |
Azione4.256 |
|
30V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 10A ITO220AC
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione6.960 |
|
40V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 10A ITO220AC
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione3.264 |
|
40V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A ITO220AC
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione7.520 |
|
30V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A ITO220AC
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione2.080 |
|
30V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 125°C |