Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli

VS-SD500N36PTC

Vishay Semiconductor Diodes Division

MOD DIODE 560A 3600V B-PUK

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

VS-SD1053C25S20L

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 1050A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 1050A
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 2500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AB, B-PUK

VS-SD500R36PTC

Vishay Semiconductor Diodes Division

MOD DIODE 560A 3600V B-PUK

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

pacchetto: -

VS-VSKE270-20PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE270-16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-SD823C25S30C

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 910A B-43

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 910A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 50mA @ 2500V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: B-43, PUK
• Supplier Device Package: B-43, Hockey PUK
• Operating Temperature - Junction: -

pacchetto: B-43, PUK

VS-VSKE320-20PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-SD1053C24S20L

Vishay Semiconductor Diodes Division

DIODE GP 2.4KV 1050A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400V
• Current - Average Rectified (Io): 1050A
• Voltage - Forward (Vf) (Max) @ If: 2.26V @ 1500A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: DO-200AB, B-PUK

VS-VSKE320-16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE320-12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE320-08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE320-04PBF

Vishay Semiconductor Diodes Division

DIODE GEN 400V 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE270-12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE270-08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-VSKE270-04PBF

Vishay Semiconductor Diodes Division

DIODE GEN 400V 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: MAGN-A-PAK (3)

VS-SD823C25S20C

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 810A B-43

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 810A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 2500V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: B-43, PUK
• Supplier Device Package: B-43, Hockey PUK
• Operating Temperature - Junction: -

pacchetto: B-43, PUK

VS-SD1500C12L

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 1600A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 1600A
• Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AB, B-PUK

VS-303URA250

Vishay Semiconductor Diodes Division

DIODE STD REC 300A DO-9

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AB, DO-9, Stud

VS-303UA250

Vishay Semiconductor Diodes Division

DIODE STD REC 300A DO-9

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AB, DO-9, Stud

VS-SD1053C22S30L

Vishay Semiconductor Diodes Division

DIODE GP 3KV 920A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 920A
• Voltage - Forward (Vf) (Max) @ If: 2.26V @ 1500A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: DO-200AB, B-PUK

VS-303URA200

Vishay Semiconductor Diodes Division

DIODE GP 1KV 330A DO205AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 330A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AB, DO-9, Stud

VS-SD1500C30L

Vishay Semiconductor Diodes Division

DIODE MODULE 3KV 1600A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 1600A
• Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 3000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AB, B-PUK

VS-SD1053C22S20L

Vishay Semiconductor Diodes Division

DIODE MODULE 2.2KV 1050A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io): 1050A
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 2200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AB, B-PUK

SD453N16S30PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 450A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 450A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: B-8

VS-SD1500C08L

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 1600A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1600A
• Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AB, B-PUK

VS-SD1500C04L

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 1600A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1600A
• Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

pacchetto: DO-200AB, B-PUK

VS-SD600N12PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: B-8

VS-305U160

Vishay Semiconductor Diodes Division

DIODE GP 1.6KV 330A DO205AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 330A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AB, DO-9, Stud