Pagina 109 - Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MPG06G-E3/100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: MPG06, Axial	Azione5.424	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06DHE3_A/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: MPG06, Axial	Azione2.496	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06D-E3/100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: MPG06, Axial	Azione2.880	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06BHE3_A/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: MPG06, Axial	Azione6.096	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MPG06B-E3/100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: MPG06, Axial	Azione3.408	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
ES07B-M-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO219 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione2.912	100V	500mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
ES07D-M-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 500MA DO219 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione4.400	200V	500mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
ES07B-M-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO219 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione4.880	100V	500mA	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
B350A-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione4.368	50V	3A	720mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	145pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
B350A-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione7.712	50V	3A	720mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	145pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SE30AFB-M3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione7.856	100V	1.4A (DC)	910mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
SE30AFJ-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione4.096	600V	1.4A (DC)	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	100µA @ 100V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
SE30AFG-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione7.264	400V	1.4A (DC)	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	10µA @ 400V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
SE30AFD-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione6.352	200V	1.4A (DC)	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	10µA @ 200V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
SE30AFB-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.4A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione3.024	100V	1.4A (DC)	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	100µA @ 100V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 175°C
SE30AFD-M3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-221AC, SMA Flat Leads	Azione2.256	200V	3A (DC)	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
BYG24J-M3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione4.688	600V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG24G-M3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione4.256	400V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG24D-M3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione7.040	200V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG24J-M3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione4.448	600V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG24G-M3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione5.904	400V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BYG24D-M3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione2.880	200V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-2EFU06HM3/I	Vishay Semiconductor Diodes Division	DIODE UF 600V 2A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-219AB	Azione2.288	600V	2A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	3µA @ 600V	-	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
BYM12-50-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AB, MELF (Glass)	Azione18.000	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYM12-400-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AB, MELF (Glass)	Azione6.216	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	14pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYM12-300-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AB, MELF (Glass)	Azione5.584	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	14pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYM12-150-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AB, MELF (Glass)	Azione7.424	150V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYM12-100-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-213AB, MELF (Glass)	Azione4.864	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C

MPG06G-E3/100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: MPG06, Axial

Azione5.424

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

MPG06DHE3_A/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: MPG06, Axial

Azione2.496

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 200V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

MPG06D-E3/100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: MPG06, Axial

Azione2.880

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 200V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

MPG06BHE3_A/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: MPG06, Axial

Azione6.096

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 100V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

MPG06B-E3/100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: MPG06, Axial

Azione3.408

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 100V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

ES07B-M-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO219

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione2.912

100V

500mA

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 100V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

ES07D-M-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO219

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione4.400

200V

500mA

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

ES07B-M-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO219

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione4.880

100V

500mA

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

B350A-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione4.368

50V

3A

720mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

145pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

B350A-M3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione7.712

50V

3A

720mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

145pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SE30AFB-M3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione7.856

100V

1.4A (DC)

910mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 100V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

SE30AFJ-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione4.096

600V

1.4A (DC)

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

100µA @ 100V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

SE30AFG-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione7.264

400V

1.4A (DC)

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

10µA @ 400V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

SE30AFD-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione6.352

200V

1.4A (DC)

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

10µA @ 200V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

SE30AFB-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.4A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione3.024

100V

1.4A (DC)

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

100µA @ 100V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 175°C

SE30AFD-M3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-221AC, SMA Flat Leads

Azione2.256

200V

3A (DC)

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 200V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

BYG24J-M3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione4.688

600V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 600V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BYG24G-M3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione4.256

400V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BYG24D-M3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione7.040

200V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BYG24J-M3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione4.448

600V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 600V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BYG24G-M3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione5.904

400V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BYG24D-M3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione2.880

200V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

VS-2EFU06HM3/I

Vishay Semiconductor Diodes Division

DIODE UF 600V 2A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-219AB

Azione2.288

600V

2A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

3µA @ 600V

-

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

BYM12-50-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

Azione18.000

50V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYM12-400-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

Azione6.216

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

14pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYM12-300-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

Azione5.584

300V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

14pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYM12-150-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

Azione7.424

150V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYM12-100-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-213AB, MELF (Glass)

Azione4.864

100V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C