Pagina 104 - Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli | Heisener Electronics
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Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Singoli

Record 10.373
Pagina  104/371
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SB2D-M3/5BT
Vishay Semiconductor Diodes Division

DIODE RECT 2A 200V DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione3.280
200V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
VSSA210-M3/61T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.7A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.7A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.696
100V
1.7A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
-
175pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-40°C ~ 150°C
VSSA310S-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.7A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.7A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 100V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.360
100V
1.7A
800mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 100V
175pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-40°C ~ 150°C
VSSA210-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.7A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.7A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 100V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.176
100V
1.7A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 100V
175pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-40°C ~ 150°C
hot UF4002-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione385.560
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SE30PAJHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione7.280
600V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 600V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SE30PAG-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione3.248
400V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 400V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SE30PAGHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione6.592
400V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 400V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SE30PAD-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione7.584
200V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 200V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SE30PADHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione3.056
200V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 200V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SE30PAB-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione6.176
600V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 600V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SE30PABHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221BC, SMA Flat Leads Exposed Pad
Azione7.376
600V
3A
1.16V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.3µs
5µA @ 600V
13pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SL13-E3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 445mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AC, SMA
Azione7.728
30V
1.5A
445mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SL12-E3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 445mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-214AC, SMA
Azione7.840
20V
1.5A
445mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
UF4006-M3/54
Vishay Semiconductor Diodes Division

DIODE 1A 800V 75NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.808
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005-M3/54
Vishay Semiconductor Diodes Division

DIODE 1A 600V 75NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione6.512
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4006-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 800V 75NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione4.304
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 600V 75NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.392
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 400V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione6.240
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 200V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.632
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
UF4002-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 100V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.888
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 50V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.808
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
ES1DHE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.120
200V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1CHE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 150V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.568
150V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1CHE3_A/H
Vishay Semiconductor Diodes Division

DIODE UFAST 150V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.416
150V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1BHE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione6.576
100V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1BHE3_A/H
Vishay Semiconductor Diodes Division

DIODE UFAST 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione3.360
100V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1AHE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 50V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione5.088
50V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C