Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori - Array

VS-VSKD250-16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 125A MAGNAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKD250-12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 125A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKD250-08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 125A MAGNAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKD250-04PBF

Vishay Semiconductor Diodes Division

DIODE GEN 400V 125A MAGNAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKC270-30PBF

Vishay Semiconductor Diodes Division

DIODE GEN 3KV 135A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io) (per Diode): 135A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 3000V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKC250-16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 125A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKJ250-16PBF

Vishay Semiconductor Diodes Division

DIODE 1.6KV 125A MAGN-A-PAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK

VS-VSMD400AW60

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 200A TO244

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244

pacchetto: TO-244AB

VS-VSMD400CW60

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 200A TO244

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244

pacchetto: TO-244AB

VS-VSKDU300/06PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 230A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 230A
• Voltage - Forward (Vf) (Max) @ If: 1.96V @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 165ns
• Current - Reverse Leakage @ Vr: 50mA @ 600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-PAK (3)

VS-VSKDU162/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 102.5A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 102.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 30mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-PAK (3)

VS-VSKDS409/150

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 100A ADDAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.03V @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6mA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

pacchetto: ADD-A-PAK (3)

VS-VSKCS409/150

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 200A ADDAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.03V @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6mA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

pacchetto: ADD-A-PAK (3)

VS-VSKJS409/150

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 200A ADDAPAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.03V @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6mA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

pacchetto: ADD-A-PAK (3)

VS-VSKD236/16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 115A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKD196/16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 97.5A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 97.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKC236/16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 115A INTAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKD236/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 115A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKD196/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 97.5A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 97.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKC236/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 115A INTAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKC196/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 97.5A INTAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 97.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKJ236/16PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.6KV 115A INTAPAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1600V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-PAK (3)

VS-VSKD236/08PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 115A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKJ236/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 115A INTAPAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-PAK (3)

VS-VSKD236/04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 115A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 400V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

pacchetto: MAGN-A-PAK (2)

VS-VSKD196/08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 97.5A INTAPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 97.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKC236/04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 115A INTAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 115A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 400V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak

VS-VSKC196/08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 97.5A INTAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 97.5A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: INT-A-Pak
• Supplier Device Package: INT-A-PAK

pacchetto: INT-A-Pak