Pagina 21 - Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori a ponte | Heisener Electronics
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Prodotti Vishay Semiconductor Diodes Division - Diodi - Raddrizzatori a ponte

Record 1.132
Pagina  21/41
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BU1006-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
pacchetto: 4-SIP, BU
Azione4.896
Standard
600V
3.2A
1.05V @ 5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
GBU8J-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.808
Standard
600V
8A
1V @ 8A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8G-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 400V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione6.256
Standard
400V
8A
1V @ 8A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8D-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione3.408
Standard
200V
8A
1V @ 8A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8B-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.400
Standard
100V
8A
1V @ 8A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6M-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 1000V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.408
Standard
1000V
6A
1V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
hot GBU6K-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione6.384
Standard
800V
6A
1V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6J-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione3.536
Standard
600V
6A
1V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6G-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 400V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.080
Standard
400V
6A
1V @ 6A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6D-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.096
Standard
200V
6A
1V @ 3A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6B-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione6.736
Standard
100V
6A
1V @ 6A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8A-M3/51
Vishay Semiconductor Diodes Division

DIODE 8A 50V INLINE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.888
Standard
50V
3.9A
1V @ 8A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6A-M3/51
Vishay Semiconductor Diodes Division

DIODE 6A 50V INLINE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3.8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione3.968
Standard
50V
3.8A
1V @ 6A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4M-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 1000V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione5.808
Standard
1000V
4A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4K-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione3.520
Standard
800V
4A
1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4J-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione5.264
Standard
600V
4A
1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4G-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 400V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.928
Standard
400V
4A
1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4D-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione3.280
Standard
200V
4A
1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4B-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione6.896
Standard
100V
4A
1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4M-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 1000V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.032
Standard
1000V
4A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4K-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione5.216
Standard
800V
4A
1V @ 4A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4J-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.960
Standard
600V
4A
1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4G-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 400V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione5.744
Standard
400V
4A
1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4D-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.616
Standard
200V
4A
1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4B-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione2.100
Standard
100V
4A
1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4A-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 50V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione4.864
Standard
50V
3A
1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU4A-M3/45
Vishay Semiconductor Diodes Division

DIODE 1PH 4A 50V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.040
Standard
50V
3A
1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
3N252-E4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 1000V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
pacchetto: 4-SIP, KBPM
Azione4.768
Standard
1000V
1.5A
1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM