Pagina 65 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
TK18A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 18A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione4.736
TK16A60W,S4X	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione6.240
TK14E65W5,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacchetto: TO-220-3	Azione7.548
SSM6L16FETE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A ES6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	pacchetto: SOT-563, SOT-666	Azione3.408
RN1425TE85LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 200MW SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 300MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione6.480
2SC5088-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 500MHZ USQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	pacchetto: SC-82A, SOT-343	Azione5.760
1SV323,H3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V ESC Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz Capacitance Ratio: 4.3 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	pacchetto: SC-79, SOD-523	Azione2.896
CRF03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 700MA SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: SOD-123F	Azione720.000
CTS520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 16pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	pacchetto: SOD-882	Azione187.992
TA78L005AP,SDENF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	pacchetto: TO-226-3, TO-92-3 Long Body	Azione5.424
TB6674FG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 16HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 350mA Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 2.7 V ~ 22 V Operating Temperature: -30°C ~ 75°C (TA) Mounting Type: Surface Mount Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Supplier Device Package: 16-HSOP	pacchetto: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs	Azione2.880
TB67B008FNG,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 24SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 3A Voltage - Supply: 5.5 V ~ 22 V Voltage - Load: 5.5 V ~ 22 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 24-SSOP	pacchetto: 24-LSSOP (0.220", 5.60mm Width)	Azione2.432
TC74VHC595F(EL,K,F	Toshiba Semiconductor and Storage	IC 8-BIT SHIFT REGISTER 16SOP Logic Type: Shift Register Output Type: Tri-State Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Supplier Device Package: 16-SOP	pacchetto: 16-SOIC (0.209", 5.30mm Width)	Azione16.494
TC74VHC00FTELM	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14-TSSOP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	pacchetto: 14-TSSOP (0.173", 4.40mm Width)	Azione4.560
TC74VCX2125FTEL	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 3.6V 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 12mA, 12mA Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacchetto: 14-TSSOP (0.173", 4.40mm Width)	Azione34.260
TC75S51FUTE85LF	Toshiba Semiconductor and Storage	IC OP AMP GP CMOS USV Amplifier Type: General Purpose Number of Circuits: 1 Output Type: - Slew Rate: 0.5 V/µs Gain Bandwidth Product: - -3db Bandwidth: - Current - Input Bias: 1pA Voltage - Input Offset: 2mV Current - Supply: 60µA Current - Output / Channel: - Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	pacchetto: 5-TSSOP, SC-70-5, SOT-353	Azione25.320
DF2S20CT,L3F	Toshiba Semiconductor and Storage	TVS DIODE 15VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 15V Voltage - Breakdown (Min): 18.8V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	pacchetto: SOD-882	Azione76.896
TLP184(TPL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	pacchetto: 6-SMD (4 Leads), Gull Wing	Azione3.996
TLP624LF1F	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-SMD Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SMD	pacchetto: 4-SMD, Gull Wing	Azione7.560
TC7SPB9307TU,LF(CT	Toshiba Semiconductor and Storage	X34 GENERAL-PURPOSE BUS SWITCH L Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Dual Supply Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	pacchetto: 6-SMD, Flat Leads	Azione24.276
TCR5BM105,L3F	Toshiba Semiconductor and Storage	500MA LDO VOUT=1.05V DROPOUT=100 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.05V Voltage - Output (Max): - Voltage Dropout (Max): 0.14V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 36µA Current - Supply (Max): - PSRR: 98dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	pacchetto: 4-XDFN Exposed Pad	Azione100.902
RN1410-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacchetto: -	Azione18.000
SSM6J402TU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 2A UF6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	pacchetto: -	Azione18.570
GT50J341-Q	Toshiba Semiconductor and Storage	PB-F IGBT / TRANSISTOR TO-3PN IC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 200 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	pacchetto: -	Azione288
SSM3K2615TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 2A UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	pacchetto: -	Azione43.317
TB9044AFNG-EL	Toshiba Semiconductor and Storage	AUTOMOTIVE VOLTAGE REGULATOR Applications: Power Supply, Automotive Applications Voltage - Input: - Number of Outputs: 2 Voltage - Output: 6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	pacchetto: -	Request a Quote
SSM14N956L-EFF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 12V 20A TCSPED FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.57mA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.33W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 14-SMD, No Lead Supplier Device Package: TCSPED-302701	pacchetto: -	Azione29.565
RN1908-LF-CT	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: -	Azione9.000

TK18A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 18A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione4.736

TK16A60W,S4X

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A DTMOSIV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15.8A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione6.240

TK14E65W5,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione7.548

SSM6L16FETE85LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

Azione3.408

RN1425TE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 300MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione6.480

2SC5088-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 500MHZ USQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: 18dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ

pacchetto: SC-82A, SOT-343

Azione5.760

1SV323,H3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
Capacitance Ratio: 4.3
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC

pacchetto: SC-79, SOD-523

Azione2.896

CRF03(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 700MA SFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: SOD-123F

Azione720.000

CTS520,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

pacchetto: SOD-882

Azione187.992

TA78L005AP,SDENF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

pacchetto: TO-226-3, TO-92-3 Long Body

Azione5.424

TB6674FG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 350mA
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 2.7 V ~ 22 V
Operating Temperature: -30°C ~ 75°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Supplier Device Package: 16-HSOP

pacchetto: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

Azione2.880

TB67B008FNG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 24SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (3)
Interface: PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 5.5 V ~ 22 V
Voltage - Load: 5.5 V ~ 22 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 24-SSOP

pacchetto: 24-LSSOP (0.220", 5.60mm Width)

Azione2.432

TC74VHC595F(EL,K,F

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16SOP

Logic Type: Shift Register
Output Type: Tri-State
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 16-SOP

pacchetto: 16-SOIC (0.209", 5.30mm Width)

Azione16.494

TC74VHC00FTELM

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-TSSOP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

Azione4.560

TC74VCX2125FTEL

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3.6V 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

Azione34.260

TC75S51FUTE85LF

Toshiba Semiconductor and Storage

IC OP AMP GP CMOS USV

Amplifier Type: General Purpose
Number of Circuits: 1
Output Type: -
Slew Rate: 0.5 V/µs
Gain Bandwidth Product: -
-3db Bandwidth: -
Current - Input Bias: 1pA
Voltage - Input Offset: 2mV
Current - Supply: 60µA
Current - Output / Channel: -
Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

pacchetto: 5-TSSOP, SC-70-5, SOT-353

Azione25.320

DF2S20CT,L3F

Toshiba Semiconductor and Storage

TVS DIODE 15VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 15V
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2

pacchetto: SOD-882

Azione76.896

TLP184(TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

pacchetto: 6-SMD (4 Leads), Gull Wing

Azione3.996

TLP624LF1F

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Current Transfer Ratio (Max): 1200% @ 1mA
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SMD

pacchetto: 4-SMD, Gull Wing

Azione7.560

TC7SPB9307TU,LF(CT

Toshiba Semiconductor and Storage

X34 GENERAL-PURPOSE BUS SWITCH L

Type: Bus Switch
Circuit: 1 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

pacchetto: 6-SMD, Flat Leads

Azione24.276

TCR5BM105,L3F

Toshiba Semiconductor and Storage

500MA LDO VOUT=1.05V DROPOUT=100

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.05V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.14V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): 36µA
Current - Supply (Max): -
PSRR: 98dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-XDFN Exposed Pad

Azione100.902

RN1410-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacchetto: -

Azione18.000

SSM6J402TU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2A UF6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UF6
Package / Case: 6-SMD, Flat Leads

pacchetto: -

Azione18.570

GT50J341-Q

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Power - Max: 200 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

pacchetto: -

Azione288

SSM3K2615TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2A UFM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

pacchetto: -

Azione43.317

TB9044AFNG-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE VOLTAGE REGULATOR

Applications: Power Supply, Automotive Applications
Voltage - Input: -
Number of Outputs: 2
Voltage - Output: 6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

pacchetto: -

Request a Quote

SSM14N956L-EFF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.33W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 14-SMD, No Lead
Supplier Device Package: TCSPED-302701

pacchetto: -

Azione29.565

RN1908-LF-CT

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: -

Azione9.000