Pagina 5 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
2SK880GRTE85LF	Toshiba Semiconductor and Storage	JFET N-CH 50V 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: SC-70, SOT-323	Azione50.250
TPCL4201(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	pacchetto: 4-XLGA	Azione2.880
SSM6P36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.33A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	pacchetto: SOT-563, SOT-666	Azione2.400
2SA1930(LBS2MATQ,M	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	pacchetto: TO-220-3 Full Pack	Azione6.080
1SS381,L3F	Toshiba Semiconductor and Storage	DIODE RF SWITCH 30V 100MA ESC Diode Type: PIN - Single Voltage - Peak Reverse (Max): 30V Current - Max: 100mA Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900 mOhm @ 2mA, 100MHz Power Dissipation (Max): - Operating Temperature: 125°C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	pacchetto: SC-79, SOD-523	Azione4.640
TA58L12S,ASHIQ(J	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	pacchetto: TO-220-3 Full Pack	Azione5.200
TAR5S40UTE85LF	Toshiba Semiconductor and Storage	IC REG LINEAR 4V 200MA UFV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 15V Voltage - Output (Min/Fixed): 4V Voltage - Output (Max): - Voltage Dropout (Max): 0.2V @ 50mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 850µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV	pacchetto: 6-SMD (5 Leads), Flat Lead	Azione2.448
TCR5AM33,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA 5DFNB Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-VDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	pacchetto: 4-VDFN Exposed Pad	Azione45.480
TC74HC373APF	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20-DIP Logic Type: D-Type Transparent Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 2 V ~ 6 V Independent Circuits: 1 Delay Time - Propagation: 12ns Current - Output High, Low: 7.8mA, 7.8mA Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-DIP	pacchetto: 20-DIP (0.300", 7.62mm)	Azione6.960
TC7SET00F,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP USV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	pacchetto: SC-74A, SOT-753	Azione5.728
TD62084AFG,N,EL	Toshiba Semiconductor and Storage	IC DRIVER DARL SINK 8-CH 18-SOP Type: Driver Protocol: - Number of Drivers/Receivers: 8/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 6 V ~ 15 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 18-SOIC (0.276", 7.00mm Width) Supplier Device Package: 18-SOP	pacchetto: 18-SOIC (0.276", 7.00mm Width)	Azione4.896
DF2S6.8MFS,L3M	Toshiba Semiconductor and Storage	X34PB-F FSC ESD PROTECTION DIODE Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Current - Peak Pulse (10/1000µs): 3A Power - Peak Pulse: 45W Power Line Protection: No Applications: - Capacitance @ Frequency: 0.45pF @ 1MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	pacchetto: SOD-923	Azione360.000
TLP181(GR,T)	Toshiba Semiconductor and Storage	OPTOCOUPLER TRANS SOIC Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-MFSOP, 4 Lead	pacchetto: 6-SMD (4 Leads), Gull Wing	Azione8.964
TC78S600FTG,EL	Toshiba Semiconductor and Storage	STEPPER MOTOR DRIVER IC, 18V/1.0 Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione7.824
TCR3UG32A,LF	Toshiba Semiconductor and Storage	X34 LDO REGULATORS VOUT: 3.2V IO Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.273V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	pacchetto: 4-XFBGA, WLCSP	Azione77.874
TCR3DF125,LM(CT	Toshiba Semiconductor and Storage	300MA LDO VOUT=1.25V DROPOUT=230 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.25V Voltage - Output (Max): - Voltage Dropout (Max): 0.62V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	pacchetto: SC-74A, SOT-753	Azione50.682
RN4901-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: -	Azione18.000
RN2111-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: -	Azione17.910
TK380A65Y-S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: -	Azione285
TB6640FTG-EL	Toshiba Semiconductor and Storage	BRUSHED MOTOR DRIVER, 40V, 3A, Q Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: PWM Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 1A Voltage - Supply: 3V ~ 5.5V Voltage - Load: 4.5V ~ 38V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	pacchetto: -	Azione12.000
TTA1713-GR-LF	Toshiba Semiconductor and Storage	TRANS PNP 45V 0.5A SMINI Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacchetto: -	Azione8.583
RN2418-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacchetto: -	Azione18.000
RN4988-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR NPN + PNP BRT, Q1B Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: -	Azione18.000
SSM6J808R-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q SS MOS P-CH LOGIC-LEV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-TSOP-F Package / Case: 6-SMD, Flat Leads	pacchetto: -	Azione7.932
TK090E65Z-S1X	Toshiba Semiconductor and Storage	650V DTMOS VI TO-220 90MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacchetto: -	Azione333
RN2707-LF	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR10KOHM Q1BER47KOH Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	pacchetto: -	Azione8.940
2SC5712-TE12L-F	Toshiba Semiconductor and Storage	TRANS NPN 50V 3A PW-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	pacchetto: -	Azione4.725
TK040Z65Z-S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 57A TO247-4L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.85mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(T) Package / Case: TO-247-4	pacchetto: -	Azione66

2SK880GRTE85LF

Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: SC-70, SOT-323

Azione50.250

TPCL4201(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XLGA
Supplier Device Package: 4-Chip LGA

pacchetto: 4-XLGA

Azione2.880

SSM6P36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

Azione2.400

2SA1930(LBS2MATQ,M

Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

pacchetto: TO-220-3 Full Pack

Azione6.080

1SS381,L3F

Toshiba Semiconductor and Storage

DIODE RF SWITCH 30V 100MA ESC

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 100mA
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900 mOhm @ 2mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 125°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC

pacchetto: SC-79, SOD-523

Azione4.640

TA58L12S,ASHIQ(J

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

pacchetto: TO-220-3 Full Pack

Azione5.200

TAR5S40UTE85LF

Toshiba Semiconductor and Storage

IC REG LINEAR 4V 200MA UFV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 15V
Voltage - Output (Min/Fixed): 4V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.2V @ 50mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 850µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: UFV

pacchetto: 6-SMD (5 Leads), Flat Lead

Azione2.448

TCR5AM33,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5DFNB

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-VDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

pacchetto: 4-VDFN Exposed Pad

Azione45.480

TC74HC373APF

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-DIP

Logic Type: D-Type Transparent Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 2 V ~ 6 V
Independent Circuits: 1
Delay Time - Propagation: 12ns
Current - Output High, Low: 7.8mA, 7.8mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-DIP

pacchetto: 20-DIP (0.300", 7.62mm)

Azione6.960

TC7SET00F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

Azione5.728

TD62084AFG,N,EL

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-SOP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 8/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 6 V ~ 15 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Supplier Device Package: 18-SOP

pacchetto: 18-SOIC (0.276", 7.00mm Width)

Azione4.896

DF2S6.8MFS,L3M

Toshiba Semiconductor and Storage

X34PB-F FSC ESD PROTECTION DIODE

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Current - Peak Pulse (10/1000µs): 3A
Power - Peak Pulse: 45W
Power Line Protection: No
Applications: -
Capacitance @ Frequency: 0.45pF @ 1MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

pacchetto: SOD-923

Azione360.000

TLP181(GR,T)

Toshiba Semiconductor and Storage

OPTOCOUPLER TRANS SOIC

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 300% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-MFSOP, 4 Lead

pacchetto: 6-SMD (4 Leads), Gull Wing

Azione8.964

TC78S600FTG,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC, 18V/1.0

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione7.824

TCR3UG32A,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 3.2V IO

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.273V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP-F (0.65x0.65)

pacchetto: 4-XFBGA, WLCSP

Azione77.874

TCR3DF125,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.25V DROPOUT=230

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.62V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

Azione50.682

RN4901-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: -

Azione18.000

RN2111-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: -

Azione17.910

TK380A65Y-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 360µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: -

Azione285

TB6640FTG-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER, 40V, 3A, Q

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: PWM
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 3V ~ 5.5V
Voltage - Load: 4.5V ~ 38V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

pacchetto: -

Azione12.000

TTA1713-GR-LF

Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacchetto: -

Azione8.583

RN2418-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacchetto: -

Azione18.000

RN4988-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN + PNP BRT, Q1B

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: -

Azione18.000

SSM6J808R-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS P-CH LOGIC-LEV

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP-F
Package / Case: 6-SMD, Flat Leads

pacchetto: -

Azione7.932

TK090E65Z-S1X

Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 90MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacchetto: -

Azione333

RN2707-LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

pacchetto: -

Azione8.940

2SC5712-TE12L-F

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A PW-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

pacchetto: -

Azione4.725

TK040Z65Z-S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 57A TO247-4L

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L(T)
Package / Case: TO-247-4

pacchetto: -

Azione66