Pagina 40 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
TK14A55D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 14A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: TO-220-3 Full Pack	Azione2.976
2SA1020-Y,F(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione2.432
2SC3324-BL(TE85L,F	Toshiba Semiconductor and Storage	TRANS NPN 120V 0.1A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione4.880
2SA1962-O(Q)	Toshiba Semiconductor and Storage	TRANS PNP 230V 15A TO-3PN Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 130W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	pacchetto: TO-3P-3, SC-65-3	Azione9.948
RN4608(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.3W SM6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	pacchetto: SC-74, SOT-457	Azione2.336
RN2710JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ESV Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	pacchetto: SOT-553	Azione5.136
RN2903FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	pacchetto: SOT-563, SOT-666	Azione33.654
HN1D03FU,LF	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 80MA US6 Diode Configuration: 2 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 80mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione3.440
TA78L24F(TE12L,F)	Toshiba Semiconductor and Storage	IC REG LINEAR 24V 150MA PW-MINI Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 24V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 6mA ~ 6.5mA PSRR: 35dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI (SOT-89)	pacchetto: TO-243AA	Azione5.232
TH58NVG2S3HTA00	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	pacchetto: 48-TFSOP (0.724", 18.40mm Width)	Azione12.672
TC7S04FU,LF	Toshiba Semiconductor and Storage	IC INVERTER HS C2MOS SSOP5 Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	pacchetto: 5-TSSOP, SC-70-5, SOT-353	Azione334.764
TC7SET04FU,LJ(CT	Toshiba Semiconductor and Storage	IC INVERTER GATE TTL 5-SSOP Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	pacchetto: 5-TSSOP, SC-70-5, SOT-353	Azione768.924
TC74VHC393FT(EL,M)	Toshiba Semiconductor and Storage	IC COUNTER BINARY DUAL 14-TSSOP Logic Type: Binary Counter Direction: Up Number of Elements: 2 Number of Bits per Element: 4 Reset: Asynchronous Timing: - Count Rate: 170MHz Trigger Type: Negative Edge Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacchetto: 14-TSSOP (0.173", 4.40mm Width)	Azione7.168
74LCX244FT	Toshiba Semiconductor and Storage	IC BUFF/DVR DUAL LV 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	pacchetto: 20-TSSOP (0.173", 4.40mm Width)	Azione49.440
TMP86PH06UG(C,KJZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 16KB OTP 44LQFP Core Processor: - Core Size: 8-Bit Speed: 16MHz Connectivity: EBI/EMI Peripherals: - Number of I/O: 8 Program Memory Size: 16KB (16K x 8) Program Memory Type: OTP EEPROM Size: - RAM Size: 512 x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: - Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 44-LQFP Supplier Device Package: 44-LQFP (10x10)	pacchetto: 44-LQFP	Azione3.920
LTA057A343F	Toshiba Semiconductor and Storage	LCD 5.7INCH 320X240 QVGA Display Type: TFT - Color Display Mode: Transmissive Touchscreen: - Diagonal Screen Size: 5.7" (144.78mm) Viewing Area: 115.20mm W x 86.40mm H Backlight: LED - White Dot Pixels: 320 x 240 (QVGA) Interface: Parallel, 18-Bit (RGB) Graphics Color: Red, Green, Blue (RGB) Background Color: -	pacchetto: -	Azione4.032
TLP199D(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET 50MA 6-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 50mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 200 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm) Relay Type: Relay	pacchetto: 6-SOP (0.173", 4.40mm)	Azione8.370
TLP185(BL-TPL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	pacchetto: 6-SMD (4 Leads), Gull Wing	Azione5.814
TLP627(TP1,F)	Toshiba Semiconductor and Storage	OPTOISOLTR 5KV DARLINGTON 4-SMD Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 1.2V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SMD	pacchetto: 4-SMD, Gull Wing	Azione210.000
TCR3UG25B,LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) LINEAR VOLTAGE Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.327V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	pacchetto: 4-XFBGA, WLCSP	Azione51.444
TMPM4G6FEFG(DBB)	Toshiba Semiconductor and Storage	TXZ FAMILY MCU Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 160MHz Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 86 Program Memory Size: 768KB (768K x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Data Converters: A/D 16x12b; D/A 2x8b Oscillator Type: Internal Operating Temperature: -40°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	pacchetto: 100-LQFP	Azione7.968
RN4987FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	pacchetto: -	Azione20.490
RN1304-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: -	Azione7.956
TK20E60W5-S1VX	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacchetto: -	Request a Quote
TB67H401FTG-EL	Toshiba Semiconductor and Storage	BRUSHEDMOTORDRIVERIC,1-CHANNEL50 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: NMOS, PMOS Step Resolution: - Applications: General Purpose Current - Output: 6A Voltage - Supply: 4.75V ~ 5.25V Voltage - Load: 10V ~ 47V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-VQFN (7x7)	pacchetto: -	Azione12.000
TB6560AFG-8	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 64HQFP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: - Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 4.5V ~ 5.5V Voltage - Load: 4.5V ~ 34V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: 64-TQFP Exposed Pad Supplier Device Package: 64-HQFP (10x10)	pacchetto: -	Azione1.410
RN1304-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: -	Request a Quote
GT20J341-S4X-S	Toshiba Semiconductor and Storage	DISCRETE IGBT TRANSISTOR TO-220S IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 45 W Switching Energy: 500µJ (on), 400µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 60ns/240ns Test Condition: 300V, 20A, 33Ohm, 15V Reverse Recovery Time (trr): 90 ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS	pacchetto: -	Azione84

TK14A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 14A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

Azione2.976

2SA1020-Y,F(M

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione2.432

2SC3324-BL(TE85L,F

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione4.880

2SA1962-O(Q)

Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO-3PN

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 130W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

pacchetto: TO-3P-3, SC-65-3

Azione9.948

RN4608(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

pacchetto: SC-74, SOT-457

Azione2.336

RN2710JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

pacchetto: SOT-553

Azione5.136

RN2903FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

pacchetto: SOT-563, SOT-666

Azione33.654

HN1D03FU,LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

Diode Configuration: 2 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 80mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione3.440

TA78L24F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 24V 150MA PW-MINI

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 24V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 6mA ~ 6.5mA
PSRR: 35dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI (SOT-89)

pacchetto: TO-243AA

Azione5.232

TH58NVG2S3HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

pacchetto: 48-TFSOP (0.724", 18.40mm Width)

Azione12.672

TC7S04FU,LF

Toshiba Semiconductor and Storage

IC INVERTER HS C2MOS SSOP5

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 2.6mA, 2.6mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

pacchetto: 5-TSSOP, SC-70-5, SOT-353

Azione334.764

TC7SET04FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER GATE TTL 5-SSOP

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

pacchetto: 5-TSSOP, SC-70-5, SOT-353

Azione768.924

TC74VHC393FT(EL,M)

Toshiba Semiconductor and Storage

IC COUNTER BINARY DUAL 14-TSSOP

Logic Type: Binary Counter
Direction: Up
Number of Elements: 2
Number of Bits per Element: 4
Reset: Asynchronous
Timing: -
Count Rate: 170MHz
Trigger Type: Negative Edge
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

Azione7.168

74LCX244FT

Toshiba Semiconductor and Storage

IC BUFF/DVR DUAL LV 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

Azione49.440

TMP86PH06UG(C,KJZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 16KB OTP 44LQFP

Core Processor: -
Core Size: 8-Bit
Speed: 16MHz
Connectivity: EBI/EMI
Peripherals: -
Number of I/O: 8
Program Memory Size: 16KB (16K x 8)
Program Memory Type: OTP
EEPROM Size: -
RAM Size: 512 x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: -
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 44-LQFP
Supplier Device Package: 44-LQFP (10x10)

pacchetto: 44-LQFP

Azione3.920

LTA057A343F

Toshiba Semiconductor and Storage

LCD 5.7INCH 320X240 QVGA

Display Type: TFT - Color
Display Mode: Transmissive
Touchscreen: -
Diagonal Screen Size: 5.7" (144.78mm)
Viewing Area: 115.20mm W x 86.40mm H
Backlight: LED - White
Dot Pixels: 320 x 240 (QVGA)
Interface: Parallel, 18-Bit (RGB)
Graphics Color: Red, Green, Blue (RGB)
Background Color: -

pacchetto: -

Azione4.032

TLP199D(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 50MA 6-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 50mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 200 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.173", 4.40mm)
Supplier Device Package: 6-SOP (2.54mm)
Relay Type: Relay

pacchetto: 6-SOP (0.173", 4.40mm)

Azione8.370

TLP185(BL-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

pacchetto: 6-SMD (4 Leads), Gull Wing

Azione5.814

TLP627(TP1,F)

Toshiba Semiconductor and Storage

OPTOISOLTR 5KV DARLINGTON 4-SMD

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Input Type: DC
Output Type: Darlington
Voltage - Output (Max): 300V
Current - Output / Channel: 150mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 1.2V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SMD

pacchetto: 4-SMD, Gull Wing

Azione210.000

TCR3UG25B,LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.327V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP-F (0.65x0.65)

pacchetto: 4-XFBGA, WLCSP

Azione51.444

TMPM4G6FEFG(DBB)

Toshiba Semiconductor and Storage

TXZ FAMILY MCU

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 160MHz
Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 86
Program Memory Size: 768KB (768K x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Data Converters: A/D 16x12b; D/A 2x8b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

pacchetto: 100-LQFP

Azione7.968

RN4987FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

pacchetto: -

Azione20.490

RN1304-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: -

Azione7.956

TK20E60W5-S1VX

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacchetto: -

Request a Quote

TB67H401FTG-EL

Toshiba Semiconductor and Storage

BRUSHEDMOTORDRIVERIC,1-CHANNEL50

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: NMOS, PMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 6A
Voltage - Supply: 4.75V ~ 5.25V
Voltage - Load: 10V ~ 47V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-VQFN (7x7)

pacchetto: -

Azione12.000

TB6560AFG-8

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 64HQFP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: -
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 34V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 64-TQFP Exposed Pad
Supplier Device Package: 64-HQFP (10x10)

pacchetto: -

Azione1.410

RN1304-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: -

Request a Quote

GT20J341-S4X-S

Toshiba Semiconductor and Storage

DISCRETE IGBT TRANSISTOR TO-220S

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 45 W
Switching Energy: 500µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 60ns/240ns
Test Condition: 300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr): 90 ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS

pacchetto: -

Azione84