Pagina 156 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
TPCA8036-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 38A 8SOIC ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	pacchetto: 8-PowerVDFN	Azione2.544
SSM6J771G,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5A 6WCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA, 3V Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 3A, 8.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: 6-UFBGA, WLCSP	pacchetto: 6-UFBGA, WLCSP	Azione2.656
2SA2154MFV-GR(TPL3	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A VESM Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	pacchetto: SOT-723	Azione90.540
RN1101CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacchetto: SC-101, SOT-883	Azione720.000
RN2606(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.3W SM6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	pacchetto: SC-74, SOT-457	Azione3.488
RN1904FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	pacchetto: SOT-563, SOT-666	Azione29.826
RN4902,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione23.262
CRY91(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE ZENER 9.1V 700MW SFLAT Voltage - Zener (Nom) (Vz): 9.1V Tolerance: ±10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10µA @ 5.5V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	pacchetto: SOD-123F	Azione3.328
ULN2003APG,CN	Toshiba Semiconductor and Storage	IC PWR RELAY 7NPN 1:1 16DIP Switch Type: Relay, Solenoid Driver Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: NPN Interface: Parallel Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	pacchetto: 16-DIP (0.300", 7.62mm)	Azione3.488
TCK323G,LF	Toshiba Semiconductor and Storage	IC MUX LOAD SW 36V DUAL 16WCSP Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 2:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 2.3 V ~ 36 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 98 mOhm Input Type: - Features: Slew Rate Controlled, Status Flag Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-UFBGA, CSPBGA Supplier Device Package: 16-WCSPC (1.9x1.9)	pacchetto: 16-UFBGA, CSPBGA	Azione4.112
TH58NVG2S3HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	pacchetto: 48-TFSOP (0.724", 18.40mm Width)	Azione3.792
TC7LX1108WBG(LC,AH	Toshiba Semiconductor and Storage	LEVEL SHIFTER 8BIT WCSP24 Translator Type: Voltage Level Channel Type: Bidirectional Number of Circuits: 1 Channels per Circuit: 8 Voltage - VCCA: 1.2V ~ 3.6V Voltage - VCCB: 1.2V ~ 3.6V Input Signal: - Output Signal: - Output Type: Tri-State, Non-Inverted Data Rate: 200Mbps Operating Temperature: -40°C ~ 85°C (TA) Features: Auto-Direction Sensing Mounting Type: Surface Mount Package / Case: 24-UFBGA, WLCSP Supplier Device Package: 24-WCSPC (2.05x2.05)	pacchetto: 24-UFBGA, WLCSP	Azione4.880
TC4S81FT5LFT	Toshiba Semiconductor and Storage	IC GATE AND 1CH 2-INP SMV Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.5 V ~ 4 V Logic Level - High: 3.5 V ~ 11 V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	pacchetto: SC-74A, SOT-753	Azione2.496
TC74HC132APF	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14-DIP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: Schmitt Trigger Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.3 V ~ 1.5 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Supplier Device Package: 14-DIP Package / Case: 14-DIP (0.300", 7.62mm)	pacchetto: 14-DIP (0.300", 7.62mm)	Azione18.252
74HCU04D(BJ)	Toshiba Semiconductor and Storage	IC INVERTER 6CH 14SOIC Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.3 V ~ 1.2 V Logic Level - High: 1.7 V ~ 4.8 V Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	pacchetto: 14-SOIC (0.154", 3.90mm Width)	Azione23.496
TLP7830(TL,E	Toshiba Semiconductor and Storage	X36 PB-F OPTO ISOLATION AMPLIFIE Type: Modulator Number of Channels: - Resolution (Bits): 1 b Sampling Rate (Per Second): - Data Interface: Serial Voltage Supply Source: Dual Supply Voltage - Supply: 3 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.295", 7.50mm Width) Supplier Device Package: -	pacchetto: 8-SOIC (0.295", 7.50mm Width)	Azione12.204
DF2B29FU,H3F	Toshiba Semiconductor and Storage	TVS DIODE 24VWM 47VC Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 24V Voltage - Breakdown (Min): 26V Voltage - Clamping (Max) @ Ipp: 47V Current - Peak Pulse (10/1000µs): 3A (8/20µs) Power - Peak Pulse: 140W Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 9pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USC	pacchetto: SC-70, SOT-323	Azione47.640
TLP240A(TP1,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 500MA 60V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 500mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD Relay Type: Relay	pacchetto: 4-SMD (0.300", 7.62mm)	Azione12.504
TLP548J(TP1,F)	Toshiba Semiconductor and Storage	PHOTOTHYRISTOR LOW TRIGGER LED Output Type: SCR Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 600V Static dV/dt (Min): 5V/µs Current - LED Trigger (Ift) (Max): 7mA Current - On State (It (RMS)) (Max): 150mA Current - Hold (Ih): 1mA Turn On Time: 10µs Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP Approvals: UR	pacchetto: 6-DIP (0.300", 7.62mm)	Azione8.946
TLP290-4(TP,E	Toshiba Semiconductor and Storage	OPTOISOLTR 2.5KV 4CH TRANS 16-SO Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	pacchetto: 16-SOIC (0.179", 4.55mm Width)	Azione6.606
74VHCT540AFT	Toshiba Semiconductor and Storage	IC BUFFER INVERT 5.5V 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	pacchetto: 20-TSSOP (0.173", 4.40mm Width)	Azione4.640
TC7SPB9306TU,LF(CT	Toshiba Semiconductor and Storage	X34 GENERAL-PURPOSE BUS SWITCH L Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Dual Supply Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	pacchetto: 6-SMD, Flat Leads	Azione25.890
7UL1G04FU,LF	Toshiba Semiconductor and Storage	L-MOS LVP SERIES INVERTER VCC:0. Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 0.4V Logic Level - High: 0.75V ~ 2.48V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	pacchetto: 5-TSSOP, SC-70-5, SOT-353	Azione28.224
TC62D776CFNAG-CEBH	Toshiba Semiconductor and Storage	IC Type: Linear Topology: Shift Register Internal Switch(s): No Number of Outputs: 1 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: No Applications: LED Lighting Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: 24-SSOP	pacchetto: -	Request a Quote
TCR3DM11-LF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.65V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	pacchetto: -	Azione29.970
RN2107MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	pacchetto: -	Azione24.000
7UL1T00FS-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC VCC: 2.3V-3.6V, SOT Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953	pacchetto: -	Request a Quote
TC74LCX574FT-EL	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 150 MHz Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Input Capacitance: 7 pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	pacchetto: -	Request a Quote

TPCA8036-H(TE12L,Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 38A 8SOIC ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

Azione2.544

SSM6J771G,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A 6WCSP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA, 3V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31 mOhm @ 3A, 8.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: 6-UFBGA, WLCSP

pacchetto: 6-UFBGA, WLCSP

Azione2.656

2SA2154MFV-GR(TPL3

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

pacchetto: SOT-723

Azione90.540

RN1101CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacchetto: SC-101, SOT-883

Azione720.000

RN2606(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

pacchetto: SC-74, SOT-457

Azione3.488

RN1904FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

pacchetto: SOT-563, SOT-666

Azione29.826

RN4902,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione23.262

CRY91(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE ZENER 9.1V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±10%
Power - Max: 700mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 5.5V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

pacchetto: SOD-123F

Azione3.328

ULN2003APG,CN

Toshiba Semiconductor and Storage

IC PWR RELAY 7NPN 1:1 16DIP

Switch Type: Relay, Solenoid Driver
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: NPN
Interface: Parallel
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

pacchetto: 16-DIP (0.300", 7.62mm)

Azione3.488

TCK323G,LF

Toshiba Semiconductor and Storage

IC MUX LOAD SW 36V DUAL 16WCSP

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 2:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 2.3 V ~ 36 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 98 mOhm
Input Type: -
Features: Slew Rate Controlled, Status Flag
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-UFBGA, CSPBGA
Supplier Device Package: 16-WCSPC (1.9x1.9)

pacchetto: 16-UFBGA, CSPBGA

Azione4.112

TH58NVG2S3HTAI0

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

pacchetto: 48-TFSOP (0.724", 18.40mm Width)

Azione3.792

TC7LX1108WBG(LC,AH

Toshiba Semiconductor and Storage

LEVEL SHIFTER 8BIT WCSP24

Translator Type: Voltage Level
Channel Type: Bidirectional
Number of Circuits: 1
Channels per Circuit: 8
Voltage - VCCA: 1.2V ~ 3.6V
Voltage - VCCB: 1.2V ~ 3.6V
Input Signal: -
Output Signal: -
Output Type: Tri-State, Non-Inverted
Data Rate: 200Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Features: Auto-Direction Sensing
Mounting Type: Surface Mount
Package / Case: 24-UFBGA, WLCSP
Supplier Device Package: 24-WCSPC (2.05x2.05)

pacchetto: 24-UFBGA, WLCSP

Azione4.880

TC4S81FT5LFT

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP SMV

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1.5 V ~ 4 V
Logic Level - High: 3.5 V ~ 11 V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

Azione2.496

TC74HC132APF

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-DIP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: Schmitt Trigger
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.3 V ~ 1.5 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Supplier Device Package: 14-DIP
Package / Case: 14-DIP (0.300", 7.62mm)

pacchetto: 14-DIP (0.300", 7.62mm)

Azione18.252

74HCU04D(BJ)

Toshiba Semiconductor and Storage

IC INVERTER 6CH 14SOIC

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.3 V ~ 1.2 V
Logic Level - High: 1.7 V ~ 4.8 V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacchetto: 14-SOIC (0.154", 3.90mm Width)

Azione23.496

TLP7830(TL,E

Toshiba Semiconductor and Storage

X36 PB-F OPTO ISOLATION AMPLIFIE

Type: Modulator
Number of Channels: -
Resolution (Bits): 1 b
Sampling Rate (Per Second): -
Data Interface: Serial
Voltage Supply Source: Dual Supply
Voltage - Supply: 3 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Supplier Device Package: -

pacchetto: 8-SOIC (0.295", 7.50mm Width)

Azione12.204

DF2B29FU,H3F

Toshiba Semiconductor and Storage

TVS DIODE 24VWM 47VC

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 24V
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Power - Peak Pulse: 140W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USC

pacchetto: SC-70, SOT-323

Azione47.640

TLP240A(TP1,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 500MA 60V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 500mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SMD (0.300", 7.62mm)
Supplier Device Package: 4-SMD
Relay Type: Relay

pacchetto: 4-SMD (0.300", 7.62mm)

Azione12.504

TLP548J(TP1,F)

Toshiba Semiconductor and Storage

PHOTOTHYRISTOR LOW TRIGGER LED

Output Type: SCR
Zero Crossing Circuit: No
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 7mA
Current - On State (It (RMS)) (Max): 150mA
Current - Hold (Ih): 1mA
Turn On Time: 10µs
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Approvals: UR

pacchetto: 6-DIP (0.300", 7.62mm)

Azione8.946

TLP290-4(TP,E

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

Number of Channels: 4
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

pacchetto: 16-SOIC (0.179", 4.55mm Width)

Azione6.606

74VHCT540AFT

Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

Azione4.640

TC7SPB9306TU,LF(CT

Toshiba Semiconductor and Storage

X34 GENERAL-PURPOSE BUS SWITCH L

Type: Bus Switch
Circuit: 1 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

pacchetto: 6-SMD, Flat Leads

Azione25.890

7UL1G04FU,LF

Toshiba Semiconductor and Storage

L-MOS LVP SERIES INVERTER VCC:0.

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 0.4V
Logic Level - High: 0.75V ~ 2.48V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

pacchetto: 5-TSSOP, SC-70-5, SOT-353

Azione28.224

TC62D776CFNAG-CEBH

Toshiba Semiconductor and Storage

IC

Type: Linear
Topology: Shift Register
Internal Switch(s): No
Number of Outputs: 1
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: No
Applications: LED Lighting
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 24-SSOP

pacchetto: -

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TCR3DM11-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.65V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

pacchetto: -

Azione29.970

RN2107MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

pacchetto: -

Azione24.000

7UL1T00FS-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: fSV
Package / Case: SOT-953

pacchetto: -

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TC74LCX574FT-EL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 150 MHz
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Input Capacitance: 7 pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

pacchetto: -

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