Prodotti Toshiba Semiconductor and Storage

2SJ438,Q(M

Toshiba Semiconductor and Storage

MOSFET P-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220NIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

TK3A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 3A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

TPH6R003NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 38A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 19A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

TK6A80E,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

SSM6L61NU,LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 4A UDFN6

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-UDFN (2x2)

pacchetto: 6-WDFN Exposed Pad

2SC4738-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

pacchetto: SC-75, SOT-416

CLH02(TE16L,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 3A L-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: L-FLAT?

1SS362TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA SSM

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 80mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: -

pacchetto: SC-75, SOT-416

TCR2EN11,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.1V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

pacchetto: 4-XFDFN Exposed Pad

TB6586FG,C8,EL,HZ

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 24SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 6.5 V ~ 16.5 V
• Voltage - Load: -
• Operating Temperature: -30°C ~ 115°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOP (0.236", 6.00mm Width)
• Supplier Device Package: 24-SSOP

pacchetto: 24-SOP (0.236", 6.00mm Width)

TB6634FNG,C,8,EL

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 30SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 6.5 V ~ 16.5 V
• Voltage - Load: -
• Operating Temperature: -30°C ~ 115°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 30-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 30-SSOP

pacchetto: 30-LSSOP (0.220", 5.60mm Width)

TB6642FTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 32VQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel, PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 10 V ~ 45 V
• Voltage - Load: 10 V ~ 45 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5x5)

pacchetto: 32-VFQFN Exposed Pad

TC7SZ00F(TE85L,JF)

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

74HC86D(BJ)

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-SOP

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacchetto: 14-SOIC (0.154", 3.90mm Width)

74VHC541FT(BE)

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST 8BIT 20TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

pacchetto: 20-TSSOP (0.173", 4.40mm Width)

TMPM380FYFG(C)

Toshiba Semiconductor and Storage

IC MCU 32BIT 256KB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: I2C, SIO, UART/USART
• Peripherals: DMA, LVD, WDT
• Number of I/O: 83
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 18x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

pacchetto: 100-LQFP

TMP86PM47AUG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 32KB OTP 44LQFP

• Core Processor: -
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: SIO, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 35
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: OTP
• EEPROM Size: -
• RAM Size: 1K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 44-LQFP
• Supplier Device Package: 44-LQFP (10x10)

pacchetto: 44-LQFP

TL1WK-DW1,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

• Color: White, Cool
• CCT (K): 6500K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 22 lm (18 lm ~ 26 lm)
• Current - Test: 60mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 131 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 180mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD
• Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
• Height - Seated (Max): 0.015" (0.39mm)

pacchetto: 2-SMD, No Lead

TB67S149FG,EL

Toshiba Semiconductor and Storage

2 PHASE UNIPOLAR STEPPING MOTOR

• Motor Type - Stepper: Unipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1 ~ 1/32
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 40 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
• Supplier Device Package: 28-HSSOP

pacchetto: 28-SOP (0.295", 7.50mm Width) + 2 Heat Tabs

SSM3J134TU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3.2A UFM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

pacchetto: -

TPCP8701-TE85L-F-M

Toshiba Semiconductor and Storage

TRANS 2NPN 80V 3A PS8

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
• Power - Max: 1.77W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: PS-8

pacchetto: -

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RN2402-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

pacchetto: -

CUHS10F60-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1A US2H

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 60 V
• Capacitance @ Vr, F: 130pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: US2H
• Operating Temperature - Junction: 150°C (Max)

pacchetto: -

TC7WH34FU-TE12L

Toshiba Semiconductor and Storage

IC BUFFER TRIPLE NON-INV SM8

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 3
• Number of Bits per Element: 1
• Input Type: -
• Output Type: -
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-SSOP

pacchetto: -

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RN1306-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

pacchetto: -

TC7WT125FU-TE12L

Toshiba Semiconductor and Storage

IC BUS BUFFER DUAL NON-INV SM8

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: -
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-SSOP

pacchetto: -

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TB9056FNG-O-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE H SWITCH MOTOR DRIVER

• Motor Type - Stepper: -
• Motor Type - AC, DC: Servo DC
• Function: Controller - Commutation, Direction Management
• Output Configuration: Half Bridge (2)
• Interface: PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: -
• Current - Output: 2A
• Voltage - Supply: 7V ~ 18V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 24-SSOP

pacchetto: -

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TCR2DG185-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.19V @ 500mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 70 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

pacchetto: -

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