Prodotti Taiwan Semiconductor Corporation

BZD27C82PWHRVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W

pacchetto: SOD-123W

BZD27C16P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 16.2V
• Tolerance: ±5.55%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZD27C18PHMHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 17.95V
• Tolerance: ±6.4%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

1M120ZHA0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N4758G A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 56V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C (TA)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

BZX585B20 RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

pacchetto: SC-79, SOD-523

MTZJ27SA R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 24.89V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 24.89V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

pacchetto: DO-204AG, DO-34, Axial

BZV55B12 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 500MW, 2%, MM

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

pacchetto: DO-213AC, MINI-MELF, SOD-80

1SMA4756 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

TSS4B01G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 4A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-4B
• Supplier Device Package: TS4B

pacchetto: 4-SIP, TS-4B

SBS34 RGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SCHOTTKY BRIDG

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

pacchetto: 4-SMD, Gull Wing

TPC816MD C9G

Taiwan Semiconductor Corporation

OPTOISO 5KV TRANS DIP-4M

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 300% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): -
• Rise / Fall Time (Typ): 4µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 70V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.2V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 200mV
• Operating Temperature: -30°C ~ 100°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TS2581CS RLG

Taiwan Semiconductor Corporation

SWITCHING REGULATOR, DC-DC, BUCK

• Output Type: PWM Signal
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 40 V
• Frequency - Switching: 100kHz
• Duty Cycle (Max): 100%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Current Limit, Soft Start
• Operating Temperature: -20°C ~ 125°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

BZT52C68-G-RHG

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 240 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacchetto: -

TSD3JFSH

Taiwan Semiconductor Corporation

3A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 18pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: -

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MUR160A

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 27pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

SFA1006G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

TS431BCX

Taiwan Semiconductor Corporation

2.495 SHUNT VOLTAGE REGULATOR

• Reference Type: Shunt
• Output Type: Programmable
• Voltage - Output (Min/Fixed): 2.495V
• Voltage - Output (Max): 36 V
• Current - Output: 100 mA
• Tolerance: ±0.5%
• Temperature Coefficient: 50ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: 36V
• Current - Supply: -
• Current - Cathode: 600 µA
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacchetto: -

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TS10K60-A

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 10A TS4K

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 10 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS4K
• Supplier Device Package: TS4K

pacchetto: -

SFAS808G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

ZM4744A

Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 15 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

pacchetto: -

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DBL159G

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 1.4KV 1.5A DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.4 kV
• Current - Average Rectified (Io): 1.5 A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacchetto: -

BZD27C12P

Taiwan Semiconductor Corporation

DIODE ZENER 12.05V 1W SUB SMA

• Voltage - Zener (Nom) (Vz): 12.05 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: -

HERAF1606G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

TUAU4GH

Taiwan Semiconductor Corporation

50NS, 4A, 400V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 62pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

BZT52B6V2S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacchetto: -

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HER1603PT

Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 16A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 16A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)

pacchetto: -

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M3Z2V2C-RRG

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 2.2 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 120 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacchetto: -