Prodotti Taiwan Semiconductor Corporation

BZD27C24PHRTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 24.2V
• Tolerance: ±5.78%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

BZD27C11PHRQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5.45%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

1SMA5940HR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1500MW, 5%, A

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 53 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

BZD17C15P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

1SMA200Z M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 1000MW, %, D

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 1500 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 152V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

1SMA4747 M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA

BZD17C18P MHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±6.38%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacchetto: DO-219AB

1M130ZHR1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

BZX85C8V2 R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 1300MW, 5%,

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

BZT55B2V7 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 500MW, 2%, Q

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

pacchetto: SOD-80 Variant

BZX55C16 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 500MW, 5%, DO

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

TS6P07G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacchetto: 4-SIP, TS-6P

BZD17C180P

Taiwan Semiconductor Corporation

SUB SMA, 800MW, 6%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 180 V
• Tolerance: ±6.41%
• Power - Max: 800 mW
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 130 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA

pacchetto: -

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TSA884CX

Taiwan Semiconductor Corporation

SOT-23, -500V, -0.15A, PNP BIPOL

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
• Power - Max: 300 mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacchetto: -

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GP1005

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: -

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RS3K

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

BZT52B2V4

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 2.4 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 45 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacchetto: -

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BZT52C62S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 62 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 215 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 43.4 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

pacchetto: -

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ZM4749A

Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

pacchetto: -

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HS15JLW

Taiwan Semiconductor Corporation

75NS, 1.5A, 600V, HIGH EFFICIENT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

BZX79B5V1

Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 2 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: -

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S1M-JR2

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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TSZU52C20

Taiwan Semiconductor Corporation

603, 150MW, 5%, SMALL SIGNAL ZEN

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 15 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603

pacchetto: -

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MBRS2545CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 45V 25A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 45 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacchetto: -

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TSM056NH04LCV-RGG

Taiwan Semiconductor Corporation

40V, 54A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (3.1x3.1)
• Package / Case: 8-PowerWDFN

pacchetto: -

S1G-KR3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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RS5J-T

Taiwan Semiconductor Corporation

250NS, 5A, 600V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 46pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

GBPC4008

Taiwan Semiconductor Corporation

40A, 800V, STANDARD BRIDGE RECTI

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 40 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

pacchetto: -