Pagina 11 - Prodotti Taiwan Semiconductor Corporation | Heisener Electronics
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Prodotti Taiwan Semiconductor Corporation

Record 4.299
Pagina  11/154
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
1N4754AHB0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 1000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 29.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
pacchetto: DO-204AL, DO-41, Axial
Azione3.776
BZD27C24PHMQG
Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 24.2V
  • Tolerance: ±5.78%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 18V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
pacchetto: DO-219AB
Azione7.824
1SMA5949HR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 1500MW, 5%,

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 250 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
pacchetto: DO-214AC, SMA
Azione7.568
1SMA5945HR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1500MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 120 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 51.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
pacchetto: DO-214AC, SMA
Azione4.416
BZD17C24P M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 800MW, %, SUB

  • Voltage - Zener (Nom) (Vz): 24V
  • Tolerance: ±5.83%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 18V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
pacchetto: DO-219AB
Azione4.400
BZY55C16 RYG
Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 500MW, 5%, 08

  • Voltage - Zener (Nom) (Vz): 16V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 12V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
pacchetto: 0805 (2012 Metric)
Azione3.008
GBU15L05 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione7.936
EABS1GHRGG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
pacchetto: 4-SMD, Gull Wing
Azione6.672
GBU606 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
pacchetto: 4-SIP, GBU
Azione3.184
KBP206G-C2
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 2A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
pacchetto: -
Request a Quote
ES1DF-T
Taiwan Semiconductor Corporation

35NS, 1A, 200V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione22.500
MBR6060PT
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 60A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
pacchetto: -
Request a Quote
TSM4436CS
Taiwan Semiconductor Corporation

60V, 8A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
HER1005GH
Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: -
Azione3.000
TS25P01G
Taiwan Semiconductor Corporation

DIODE BRIDGE 50V 25A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
pacchetto: -
Request a Quote
S12GCH
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 78pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione9.000
1N4007GH-A0G
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
FR305G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
1N5822H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
TUAS6KH
Taiwan Semiconductor Corporation

6A, 800V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 39pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.6U
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione18.000
BZX584B30
Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 30 V
  • Tolerance: ±2%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 21 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
pacchetto: -
Request a Quote
RS1KFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione84.000
BZT52C36
Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 36 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
pacchetto: -
Request a Quote
TSM60NB099CZ-C0G
Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 38A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
KBU402G
Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 100V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacchetto: -
Request a Quote
KBU801G
Taiwan Semiconductor Corporation

DIODE BRIDGE 8A 50V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
pacchetto: -
Request a Quote
SRF10150
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 150V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
pacchetto: -
Request a Quote
TS2581CS
Taiwan Semiconductor Corporation

ASYNCHRONOUS BUCK SWITCHING CONT

  • Output Type: PWM Signal
  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 8V ~ 40V
  • Frequency - Switching: 100kHz
  • Duty Cycle (Max): 100%
  • Synchronous Rectifier: No
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Current Limit, Soft Start
  • Operating Temperature: -20°C ~ 125°C
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote