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Prodotti Panasonic Electronic Components - Transistor - FET, MOSFET - Singoli

Record 97
Pagina  2/4
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FM6K62010L
Panasonic Electronic Components

MOSFET N-CH 20V 2A SC113DA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSMini6-F1-B
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione3.472
MOSFET (Metal Oxide)
20V
2A (Ta)
2.5V, 4V
1.3V @ 1mA
-
280pF @ 10V
±10V
Schottky Diode (Isolated)
700mW (Ta)
105 mOhm @ 1A, 4V
125°C (TJ)
Surface Mount
WSMini6-F1-B
6-SMD, Flat Leads
MTM131270BBF
Panasonic Electronic Components

MOSFET P-CH 20V 2A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Mini3-G3-B
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.064
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8 V, 4V
1.1V @ 1mA
-
300pF @ 10V
±10V
-
700mW (Ta)
130 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
Mini3-G3-B
TO-236-3, SC-59, SOT-23-3
hot MTM861270LBF
Panasonic Electronic Components

MOSFET P-CH 20V 2A WSSMINI6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSSMini6-F1
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione72.600
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4V
1.1V @ 1mA
-
300pF @ 10V
±10V
-
540mW (Ta)
120 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
WSSMini6-F1
6-SMD, Flat Leads
FK3906010L
Panasonic Electronic Components

MOSFET N-CH 60V 100MA SSMINI3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 125mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSMini3-F3-B
  • Package / Case: SC-89, SOT-490
pacchetto: SC-89, SOT-490
Azione2.832
MOSFET (Metal Oxide)
60V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±12V
-
125mW (Ta)
12 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
SSMini3-F3-B
SC-89, SOT-490
FJ3303010L
Panasonic Electronic Components

MOSFET P-CH 30V 100MA SSSMINI3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSSMini3-F2-B
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione3.504
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±12V
-
100mW (Ta)
7 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
SSSMini3-F2-B
SOT-723
2SK3046
Panasonic Electronic Components

MOSFET N-CH 500V 7A TO-220D

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220D-A1
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione8.628
MOSFET (Metal Oxide)
500V
7A (Tc)
10V
5V @ 1mA
-
1200pF @ 20V
±30V
-
2W (Ta), 40W (Tc)
1 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220D-A1
TO-220-3 Full Pack
hot 2SK3043
Panasonic Electronic Components

MOSFET N-CH 450V 5A TO-220D

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220D-A1
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione118.128
MOSFET (Metal Oxide)
450V
5A (Tc)
10V
5V @ 1mA
-
700pF @ 20V
±30V
-
2W (Ta), 35W (Tc)
1.3 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-220D-A1
TO-220-3 Full Pack
2SK3048
Panasonic Electronic Components

MOSFET N-CH 600V 3A TO-220D

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220D-A1
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione2.100
MOSFET (Metal Oxide)
600V
3A (Tc)
10V
5V @ 1mA
-
750pF @ 20V
±30V
-
2W (Ta), 35W (Tc)
2.5 Ohm @ 2A, 10V
150°C (TJ)
Through Hole
TO-220D-A1
TO-220-3 Full Pack
hot MTM232270LBF
Panasonic Electronic Components

MOSFET N CH 20V 2A SMINI3-G1-B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMini3-G1-B
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione18.636
MOSFET (Metal Oxide)
20V
2A (Ta)
2.5V, 4V
1.3V @ 1mA
-
290pF @ 10V
±10V
-
500mW (Ta)
110 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
SMini3-G1-B
SC-70, SOT-323
hot MTM761230LBF
Panasonic Electronic Components

MOSFET P-CH 20V 3A WSMINI6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSMini6-F1-B
  • Package / Case: 6-SMD, Flat Leads
pacchetto: 6-SMD, Flat Leads
Azione634.884
MOSFET (Metal Oxide)
20V
3A (Ta)
2.5V, 4V
1.3V @ 1mA
-
1000pF @ 10V
±10V
-
700mW (Ta)
55 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
WSMini6-F1-B
6-SMD, Flat Leads
2SK3064G0L
Panasonic Electronic Components

MOSFET N-CH 30V .1A S-MINI-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMini3-F2
  • Package / Case: SC-85
pacchetto: SC-85
Azione3.296
MOSFET (Metal Oxide)
30V
100mA (Ta)
5V
2V @ 1µA
-
-
±20V
-
150mW (Ta)
50 Ohm @ 10mA, 5V
150°C (TJ)
Surface Mount
SMini3-F2
SC-85
2SK3892
Panasonic Electronic Components

MOSFET N-CH 200V 22A TO-220D

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3177pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220D-A1
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione7.024
MOSFET (Metal Oxide)
200V
22A (Tc)
10V
4.5V @ 1mA
-
3177pF @ 25V
±30V
-
2W (Ta), 40W (Tc)
62 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-220D-A1
TO-220-3 Full Pack
MTM982400BBF
Panasonic Electronic Components

MOSFET N-CH 40V 7A SO8-F1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SO8-F1-B
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione5.936
MOSFET (Metal Oxide)
40V
7A (Ta)
5V, 10V
2.5V @ 1mA
-
1750pF @ 10V
±20V
-
2W (Ta)
23 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
SO8-F1-B
8-SMD, Flat Lead
hot 2SK326800L
Panasonic Electronic Components

MOSFET N-CH 100V 15A UG-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DL
  • Package / Case: U-G2
pacchetto: U-G2
Azione34.200
MOSFET (Metal Oxide)
100V
15A (Tc)
10V
4V @ 1mA
-
960pF @ 10V
±20V
-
1W (Ta), 20W (Tc)
100 mOhm @ 12A, 10V
150°C (TJ)
Surface Mount
U-DL
U-G2
hot MTM981400BBF
Panasonic Electronic Components

MOSFET P-CH 40V 7A S08

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SO8-F1-B
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione14.160
MOSFET (Metal Oxide)
40V
7A (Ta)
4.5V, 10V
2.5V @ 1mA
-
2700pF @ 10V
±20V
-
2W (Ta)
25 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
SO8-F1-B
8-SMD, Flat Lead
hot 2SK3045
Panasonic Electronic Components

MOSFET N-CH 500V 2.5A TO-220D

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220D-A1
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione33.600
MOSFET (Metal Oxide)
500V
2.5A (Tc)
10V
5V @ 1mA
-
330pF @ 20V
±30V
-
2W (Ta), 30W (Tc)
4 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-220D-A1
TO-220-3 Full Pack
SK8603140L
Panasonic Electronic Components

MOSFET N-CH 30V 25A 8HSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 5.85mA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSO
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione5.712
MOSFET (Metal Oxide)
30V
25A (Ta), 103A (Tc)
4.5V, 10V
3V @ 5.85mA
37nC @ 4.5V
6860pF @ 10V
±20V
-
2.5W (Ta), 40W (Tc)
2.2 mOhm @ 23A, 10V
150°C (TJ)
Surface Mount
8-HSO
8-PowerSMD, Flat Leads
hot 2SK302500L
Panasonic Electronic Components

MOSFET N-CH 60V 30A UG-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DL
  • Package / Case: U-G2
pacchetto: U-G2
Azione36.000
MOSFET (Metal Oxide)
60V
30A (Tc)
4V, 10V
2.5V @ 1mA
-
1200pF @ 10V
±20V
-
1W (Ta), 25W (Tc)
40 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
U-DL
U-G2
MTMF82310BBF
Panasonic Electronic Components

MOSFET N-CH 30V 18A S08

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SO8-F1-B
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione23.508
MOSFET (Metal Oxide)
30V
18A (Ta)
4.5V, 10V
2.5V @ 1mA
-
6000pF @ 10V
±20V
-
-
4.2 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
SO8-F1-B
8-SMD, Flat Lead
hot SK8603150L
Panasonic Electronic Components

MOSFET N-CH 30V 26A 8HSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 4.38mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSO
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione36.000
MOSFET (Metal Oxide)
30V
26A (Ta), 89A (Tc)
4.5V, 10V
3V @ 4.38mA
28nC @ 4.5V
5180pF @ 10V
±20V
-
2.9W (Ta), 34W (Tc)
2.5 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-HSO
8-PowerSMD, Flat Leads
FK8V03040L
Panasonic Electronic Components

MOSFET N CH 33V 10A WMINI8-F1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1.12mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WMini8-F1
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione4.352
MOSFET (Metal Oxide)
33V
10A (Ta)
4.5V, 10V
2.5V @ 1.12mA
7.2nC @ 4.5V
750pF @ 10V
±20V
-
1W (Ta)
10 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
WMini8-F1
8-SMD, Flat Lead
SK8403160L
Panasonic Electronic Components

MOSFET N-CH 30V 18A 8HSSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 3.35mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3920pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSSO
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione4.720
MOSFET (Metal Oxide)
30V
18A (Ta), 70A (Tc)
4.5V, 10V
3V @ 3.35mA
22nC @ 4.5V
3920pF @ 10V
±20V
-
2W (Ta), 28W (Tc)
3.3 mOhm @ 14.5A, 10V
150°C (TJ)
Surface Mount
8-HSSO
8-SMD, Flat Lead
FJ3P02100L
Panasonic Electronic Components

MOSFET P CH 20V 4.4A PMCP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
  • Vgs(th) (Max) @ Id: 1.05V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 3.7A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PMCP
  • Package / Case: 3-SMD, Non-Standard
pacchetto: 3-SMD, Non-Standard
Azione3.488
MOSFET (Metal Oxide)
20V
4.4A (Ta)
2V, 4.5V
1.05V @ 1mA
-
3000pF @ 10V
±8V
-
-
12.5 mOhm @ 3.7A, 4.5V
150°C (TJ)
Surface Mount
3-PMCP
3-SMD, Non-Standard
hot SK8603170L
Panasonic Electronic Components

MOSFET N-CH 30V 20A 8HSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 2.56mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSO
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione12.300
MOSFET (Metal Oxide)
30V
20A (Ta), 59A (Tc)
4.5V, 10V
3V @ 2.56mA
17nC @ 4.5V
2940pF @ 10V
±20V
-
2.8W (Ta), 24W (Tc)
4.1 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
8-HSO
8-PowerSMD, Flat Leads
hot SK8403170L
Panasonic Electronic Components

MOSFET N-CH 30V 16A 8HSSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 2.56mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 24.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSSO
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione35.640
MOSFET (Metal Oxide)
30V
16A (Ta), 59A (Tc)
4.5V, 10V
3V @ 2.56mA
17nC @ 4.5V
2940pF @ 10V
±20V
-
2W (Ta), 24.6W (Tc)
4.1 mOhm @ 12A, 10V
150°C (TJ)
Surface Mount
8-HSSO
8-SMD, Flat Lead
FK8V03050L
Panasonic Electronic Components

MOSFET N CH 33V 8A WMINI8-F1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WMini8-F1
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione3.328
MOSFET (Metal Oxide)
33V
8A (Ta)
4.5V, 10V
2.5V @ 730µA
5.1nC @ 4.5V
520pF @ 10V
±20V
-
1W (Ta)
15 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
WMini8-F1
8-SMD, Flat Lead
SK8603180L
Panasonic Electronic Components

MOSFET N-CH 30V 15A 8HSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSO
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione3.456
MOSFET (Metal Oxide)
30V
15A (Ta), 39A (Tc)
4.5V, 10V
3V @ 1.45mA
9.2nC @ 4.5V
1680pF @ 10V
±20V
-
2.4W (Ta), 19W (Tc)
7.1 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-HSO
8-PowerSMD, Flat Leads
2SK303100L
Panasonic Electronic Components

MOSFET N-CH 100V 15A UG-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-G1
  • Package / Case: U-G1
pacchetto: U-G1
Azione21.936
MOSFET (Metal Oxide)
100V
15A (Tc)
4V, 10V
2.5V @ 1mA
-
300pF @ 10V
±20V
-
1W (Ta), 20W (Tc)
135 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
U-G1
U-G1