Pagina 66 - Prodotti ON Semiconductor - Transistor - Bipolari (BJT) - Singoli | Heisener Electronics
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Prodotti ON Semiconductor - Transistor - Bipolari (BJT) - Singoli

Record 2.403
Pagina  66/86
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MJ11022
ON Semiconductor

TRANS NPN DARL 250V 15A TO-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
  • Power - Max: 175W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: TO-204AA, TO-3
Azione4.800
15A
250V
3.4V @ 150mA, 15A
1mA
400 @ 10A, 5V
175W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
hot MJ11021
ON Semiconductor

TRANS PNP DARL 250V 15A TO-3

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
  • Power - Max: 175W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: TO-204AA, TO-3
Azione4.352
15A
250V
3.4V @ 150mA, 15A
1mA
400 @ 10A, 5V
175W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
D45C12G
ON Semiconductor

TRANS PNP 80V 4A TO-220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
  • Power - Max: 30W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione3.264
4A
80V
500mV @ 50mA, 1A
100nA
40 @ 200mA, 1V
30W
40MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot D45C12
ON Semiconductor

TRANS PNP 80V 4A TO-220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
  • Power - Max: 30W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione9.156
4A
80V
500mV @ 50mA, 1A
100nA
40 @ 200mA, 1V
30W
40MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
D44C12G
ON Semiconductor

TRANS NPN 80V 4A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
  • Power - Max: 30W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.728
4A
80V
500mV @ 50mA, 1A
100nA
40 @ 200mA, 1V
30W
40MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUV22
ON Semiconductor

TRANS NPN 250V 40A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 40A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5A, 20A
  • Current - Collector Cutoff (Max): 3mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
  • Power - Max: 250W
  • Frequency - Transition: 8MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-3
pacchetto: TO-204AE
Azione4.800
40A
250V
1.5V @ 2.5A, 20A
3mA
20 @ 10A, 4V
250W
8MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AE
TO-3
BUL44G
ON Semiconductor

TRANS NPN 400V 2A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
  • Power - Max: 50W
  • Frequency - Transition: 13MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.120
2A
400V
600mV @ 200mA, 1A
100µA
14 @ 200mA, 5V
50W
13MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUL44
ON Semiconductor

TRANS NPN 400V 2A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
  • Power - Max: 50W
  • Frequency - Transition: 13MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione3.488
2A
400V
600mV @ 200mA, 1A
100µA
14 @ 200mA, 5V
50W
13MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUL146G
ON Semiconductor

TRANS NPN 400V 6A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
  • Power - Max: 100W
  • Frequency - Transition: 14MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione4.176
6A
400V
700mV @ 600mA, 3A
100µA
14 @ 500mA, 5V
100W
14MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot BUL146FG
ON Semiconductor

TRANS NPN 400V 6A TO-220FP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
  • Power - Max: 40W
  • Frequency - Transition: 14MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
pacchetto: TO-220-3 Full Pack
Azione87.600
6A
400V
700mV @ 600mA, 3A
100µA
14 @ 500mA, 5V
40W
14MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
BUL146F
ON Semiconductor

TRANS NPN 400V 6A TO-220FP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
  • Power - Max: 40W
  • Frequency - Transition: 14MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
pacchetto: TO-220-3 Full Pack
Azione3.408
6A
400V
700mV @ 600mA, 3A
100µA
14 @ 500mA, 5V
40W
14MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
BUL146
ON Semiconductor

TRANS NPN 400V 6A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
  • Power - Max: 100W
  • Frequency - Transition: 14MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione4.208
6A
400V
700mV @ 600mA, 3A
100µA
14 @ 500mA, 5V
100W
14MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot BUH51G
ON Semiconductor

TRANS NPN 500V 3A TO-225

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 1V
  • Power - Max: 50W
  • Frequency - Transition: 23MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
pacchetto: TO-225AA, TO-126-3
Azione32.400
3A
500V
500mV @ 200mA, 1A
100µA
8 @ 1A, 1V
50W
23MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BUH51
ON Semiconductor

TRANS NPN 500V 3A TO-225

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 1V
  • Power - Max: 50W
  • Frequency - Transition: 23MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
pacchetto: TO-225AA, TO-126-3
Azione4.112
3A
500V
500mV @ 200mA, 1A
100µA
8 @ 1A, 1V
50W
23MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BUH50G
ON Semiconductor

TRANS NPN 500V 4A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
  • Power - Max: 50W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione4.592
4A
500V
1V @ 1A, 3A
100µA
5 @ 2A, 5V
50W
4MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUH50
ON Semiconductor

TRANS NPN 500V 4A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 500V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 2A, 5V
  • Power - Max: 50W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.968
4A
500V
1V @ 1A, 3A
100µA
5 @ 2A, 5V
50W
4MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUH150G
ON Semiconductor

TRANS NPN 700V 15A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 23MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione3.264
15A
700V
5V @ 4A, 20A
100µA
8 @ 10A, 5V
150W
23MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot BUH150
ON Semiconductor

TRANS NPN 700V 15A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 23MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione39.396
15A
700V
5V @ 4A, 20A
100µA
8 @ 10A, 5V
150W
23MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUH100G
ON Semiconductor

TRANS NPN 400V 10A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Power - Max: 100W
  • Frequency - Transition: 23MHz
  • Operating Temperature: -60°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione6.560
10A
400V
750mV @ 1.5A, 7A
100µA
10 @ 5A, 5V
100W
23MHz
-60°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUH100
ON Semiconductor

TRANS NPN 700V 10A TO-220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Power - Max: 100W
  • Frequency - Transition: 23MHz
  • Operating Temperature: -60°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione7.968
10A
700V
750mV @ 1.5A, 7A
100µA
10 @ 5A, 5V
100W
23MHz
-60°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BUD42DG
ON Semiconductor

TRANS NPN 350V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.944
4A
350V
1V @ 500mA, 2A
100µA
10 @ 2A, 5V
25W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
BUD42D-1G
ON Semiconductor

TRANS NPN 350V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.624
4A
350V
1V @ 500mA, 2A
100µA
10 @ 2A, 5V
25W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
BUD42D-001
ON Semiconductor

TRANS NPN 350V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.368
4A
350V
1V @ 500mA, 2A
100µA
10 @ 2A, 5V
25W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
BUD42D
ON Semiconductor

TRANS NPN 350V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
  • Power - Max: 25W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.224
4A
350V
1V @ 500mA, 2A
100µA
10 @ 2A, 5V
25W
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
BUB323Z
ON Semiconductor

TRANS NPN DARL 350V 10A D2PAK

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
  • Power - Max: 150W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.032
10A
350V
1.7V @ 250mA, 10A
100µA
500 @ 5A, 4.6V
150W
2MHz
-65°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
BU323Z
ON Semiconductor

TRANS NPN DARL 350V 10A TO-218

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
  • Power - Max: 150W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
pacchetto: TO-218-3
Azione2.928
10A
350V
1.7V @ 250mA, 10A
100µA
500 @ 5A, 4.6V
150W
2MHz
-65°C ~ 175°C (TJ)
Through Hole
TO-218-3
SOT-93
BSV52LT1
ON Semiconductor

TRANS NPN 12V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.480
100mA
12V
400mV @ 5mA, 50mA
100nA (ICBO)
40 @ 10mA, 1V
225mW
400MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot BSS64LT1
ON Semiconductor

TRANS NPN 80V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione24.120
100mA
80V
200mV @ 15mA, 50mA
100nA (ICBO)
20 @ 10mA, 1V
225mW
60MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)