Pagina 210 - Prodotti Nexperia USA Inc. | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Prodotti Nexperia USA Inc.

Record 11.821
Pagina  210/423
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
PSMN017-30BL,118
Nexperia USA Inc.

MOSFET N-CH 30V 32A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione25.530
PSMN7R0-30YL,115
Nexperia USA Inc.

MOSFET N-CH 30V 76A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione122.022
PBSS4021PX,115
Nexperia USA Inc.

TRANS PNP 20V 6.2A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6.2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 265mV @ 345mA, 6.9A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
  • Power - Max: 2.5W
  • Frequency - Transition: 105MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: TO-243AA
Azione2.160
BSR31,115
Nexperia USA Inc.

TRANS PNP 60V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.35W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: TO-243AA
Azione3.280
PDTA114TMB,315
Nexperia USA Inc.

TRANS PREBIAS PNP 250MW 3DFN

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 180MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006B (0.6x1)
pacchetto: 3-XFDFN
Azione3.472
PDTC124TMB,315
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW 3DFN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006B (0.6x1)
pacchetto: 3-XFDFN
Azione3.584
PDTA144EU,115
Nexperia USA Inc.

TRANS PREBIAS PNP 200MW SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione28.470
BC847BPN/DG/B2,115
Nexperia USA Inc.

TRANS GEN PURPOSE SC-88

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.760
PEMB14,115
Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: SOT-563, SOT-666
Azione6.160
PEMB17,115
Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: SOT-563, SOT-666
Azione2.608
PEMH13,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
pacchetto: SOT-563, SOT-666
Azione5.040
BZX884-B8V2,315
Nexperia USA Inc.

DIODE ZENER 8.2V 250MW SOD882

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±2%
  • Power - Max: 250mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 700nA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: DFN1006-2
pacchetto: SOD-882
Azione2.192
BZB984-C7V5,115
Nexperia USA Inc.

DIODE ZENER ARRAY 7.5V SOT663

  • Configuration: 1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±5%
  • Power - Max: 265mW
  • Impedance (Max) (Zzt): 6 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-663
  • Supplier Device Package: SOT-663
pacchetto: SOT-663
Azione3.296
BC807RAZ
Nexperia USA Inc.

BC807RA/SOT1268/DFN1412-6

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.440
74HCT259DB,112
Nexperia USA Inc.

IC 8BIT ADDRESSABLE LATCH 16SSOP

  • Logic Type: D-Type, Addressable
  • Circuit: 1:8
  • Output Type: Standard
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 20ns
  • Current - Output High, Low: 4mA, 4mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SSOP
pacchetto: 16-SSOP (0.209", 5.30mm Width)
Azione4.896
XC7SHU04GW,125
Nexperia USA Inc.

IC INVERTER SIGATE CMOS 5TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.3 V ~ 1.1 V
  • Logic Level - High: 1.7 V ~ 4.4 V
  • Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-TSSOP
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione2.736
74HCT14DB,112
Nexperia USA Inc.

IC HEX INV SCHMITT TRIG 14SSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.5 V ~ 0.6 V
  • Logic Level - High: 1.9 V ~ 2.1 V
  • Max Propagation Delay @ V, Max CL: 34ns @ 4.5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SSOP
  • Package / Case: 14-SSOP (0.209", 5.30mm Width)
pacchetto: 14-SSOP (0.209", 5.30mm Width)
Azione16.692
74LV02BQ,115
Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-DHVQFN

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1 V ~ 5.5 V
  • Current - Quiescent (Max): 40µA
  • Current - Output High, Low: 12mA, 12mA
  • Logic Level - Low: 0.3 V ~ 0.8 V
  • Logic Level - High: 0.9 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-DHVQFN (2.5x3)
  • Package / Case: 14-VFQFN Exposed Pad
pacchetto: 14-VFQFN Exposed Pad
Azione6.448
74LVC02APW,118
Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-TSSOP

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.2 V ~ 3.6 V
  • Current - Quiescent (Max): 40µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.12 V ~ 0.8 V
  • Logic Level - High: 1.08 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
pacchetto: 14-TSSOP (0.173", 4.40mm Width)
Azione6.048
74HC1G08GV,125
Nexperia USA Inc.

IC GATE AND 1CH 2-INP 5-TSOP

  • Logic Type: AND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 20µA
  • Current - Output High, Low: 2.6mA, 2.6mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-TSOP
  • Package / Case: SC-74A, SOT-753
pacchetto: SC-74A, SOT-753
Azione7.184
74LVC16240ADGG,512
Nexperia USA Inc.

IC INVERTER QUAD 4-INPUT 48TSSOP

  • Logic Type: Buffer, Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width)
  • Supplier Device Package: 48-TSSOP
pacchetto: 48-TFSOP (0.240", 6.10mm Width)
Azione2.752
74HC4316DB,118
Nexperia USA Inc.

IC SWITCH QUAD 1X1 16SSOP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 135 Ohm
  • Channel-to-Channel Matching (ΔRon): 6 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 10 V
  • Voltage - Supply, Dual (V±): ±1 V ~ 5 V
  • Switch Time (Ton, Toff) (Max): 16ns, 16ns
  • -3db Bandwidth: 160MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 100nA
  • Crosstalk: -60dB @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SSOP
pacchetto: 16-SSOP (0.209", 5.30mm Width)
Azione2.640
74LVC2G66GM,125
Nexperia USA Inc.

IC SWITCH DUAL SPST 8XQFN

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 10 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 3.9ns, 5ns
  • -3db Bandwidth: 500MHz
  • Charge Injection: 7.5pC
  • Channel Capacitance (CS(off), CD(off)): 5pF
  • Current - Leakage (IS(off)) (Max): 5µA
  • Crosstalk: -56dB @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 8-XFQFN Exposed Pad
  • Supplier Device Package: 8-XQFN (1.6x1.6)
pacchetto: 8-XFQFN Exposed Pad
Azione5.440
MMBZ33VALVL
Nexperia USA Inc.

MMBZ33VAL/SOT23/TO-236AB

  • Type: -
  • Unidirectional Channels: -
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): -
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: -
  • Applications: -
  • Capacitance @ Frequency: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.200
PBHV9115Z-QX
Nexperia USA Inc.

PBHV9115Z-Q/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
  • Power - Max: 700 mW
  • Frequency - Transition: 115MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: -
Azione3.000
BZX884S-B33YL
Nexperia USA Inc.

BZX884S-B33/SOD882BD/XSON2

  • Voltage - Zener (Nom) (Vz): 33 V
  • Tolerance: ±2.12%
  • Power - Max: 365 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: DFN1006BD-2
pacchetto: -
Request a Quote
BZX8450-C5V6R
Nexperia USA Inc.

BZX8450-C5V6/SOT23/TO-236AB

  • Voltage - Zener (Nom) (Vz): 5.6 V
  • Tolerance: ±5%
  • Power - Max: 250 mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 2 µA @ 4 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
pacchetto: -
Azione215.928
NXV90EPR
Nexperia USA Inc.

NXV90EP/SOT23/TO-236AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione134.853