Prodotti Microsemi Corporation

APT35GA90BD15

Microsemi Corporation

IGBT 900V 63A 290W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 63A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
• Power - Max: 290W
• Switching Energy: 642µJ (on), 382µJ (off)
• Input Type: Standard
• Gate Charge: 84nC
• Td (on/off) @ 25°C: 12ns/104ns
• Test Condition: 600V, 18A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

pacchetto: TO-247-3

JANTX2N6212

Microsemi Corporation

TRANS PNP 300V 2A TO-66

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 125mA, 1A
• Current - Collector Cutoff (Max): 5mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
• Power - Max: 3W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-213AA, TO-66-2
• Supplier Device Package: TO-66 (TO-213AA)

pacchetto: TO-213AA, TO-66-2

JANTXV2N3507AL

Microsemi Corporation

TRANS NPN 50V 3A TO5

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

pacchetto: TO-205AA, TO-5-3 Metal Can

MS2202

Microsemi Corporation

TRANS BIPO NPN M115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: 1.025GHz ~ 1.15GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9dB
• Power - Max: 10W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
• Current - Collector (Ic) (Max): 250mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M115
• Supplier Device Package: M115

pacchetto: M115

JANTXV1N756A-1

Microsemi Corporation

DIODE ZENER 8.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

1N4969US

Microsemi Corporation

DIODE ZENER 30V 5W D5B

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

pacchetto: E-MELF

SMBG5934AE3/TR13

Microsemi Corporation

DIODE ZENER 24V 2W SMBG

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

SMBG4739CE3/TR13

Microsemi Corporation

DIODE ZENER 9.1V 2W SMBG

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

JANTXV1N972D-1

Microsemi Corporation

DIODE ZENER 30V 500MW DO35

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 49 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

CDLL3021A

Microsemi Corporation

DIODE ZENER 11V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

CDLL5922C

Microsemi Corporation

DIODE ZENER 7.5V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±2%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

CDLL5518B

Microsemi Corporation

DIODE ZENER 3.3V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 26 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacchetto: DO-213AB, MELF

1N5364AE3/TR13

Microsemi Corporation

DIODE ZENER 33V 5W T18

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 23.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

2EZ11D5E3/TR12

Microsemi Corporation

DIODE ZENER 11V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

JANTX1N1614

Microsemi Corporation

DIODE GEN PURP 200V 15A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-203AA, DO-4, Stud

AGLN250V5-ZCSG81I

Microsemi Corporation

IC FPGA 60 I/O 81CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 6144
• Total RAM Bits: 36864
• Number of I/O: 60
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 81-WFBGA, CSBGA
• Supplier Device Package: 81-CSP (5x5)

pacchetto: 81-WFBGA, CSBGA

A1440A-VQ100I

Microsemi Corporation

IC FPGA 83 I/O 100VQFP

• Number of LABs/CLBs: 564
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 4000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

pacchetto: 100-TQFP

A42MX16-1PQG160I

Microsemi Corporation

IC FPGA 125 I/O 160QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 125
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 160-BQFP
• Supplier Device Package: 160-PQFP (28x28)

pacchetto: 160-BQFP

ZL30132GGG

Microsemi Corporation

IC NETWORK SYNCHRONIZER 64CABGA

• PLL: Yes
• Main Purpose: Ethernet, SONET/SDH, Telecom
• Input: LVCMOS
• Output: LVCMOS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 6:4
• Differential - Input:Output: No/Yes
• Frequency - Max: 622.08MHz
• Voltage - Supply: 2.97 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 64-BGA
• Supplier Device Package: 64-CABGA (9x9)

pacchetto: 64-BGA

MP4KE6.8CAE3

Microsemi Corporation

TVS DIODE 5.8VWM 10.5VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.8V
• Voltage - Breakdown (Min): 6.45V
• Voltage - Clamping (Max) @ Ipp: 10.5V
• Current - Peak Pulse (10/1000µs): 38A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

MLCE14A

Microsemi Corporation

TVS DIODE 14VWM 23.2VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 14V
• Voltage - Breakdown (Min): 15.6V
• Voltage - Clamping (Max) @ Ipp: 23.2V
• Current - Peak Pulse (10/1000µs): 65A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

pacchetto: DO-201AA, DO-27, Axial

MX5KP13CA

Microsemi Corporation

TVS DIODE 13VWM 21.5VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 232A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MXSMCG150A

Microsemi Corporation

TVS DIODE 150VWM 243VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

MXLSMLJ60AE3

Microsemi Corporation

TVS DIODE 60VWM 96.8VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 31A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacchetto: DO-214AB, SMC

MXLP6KE56CA

Microsemi Corporation

TVS DIODE 47.8VWM 77VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 47.8V
• Voltage - Breakdown (Min): 53.2V
• Voltage - Clamping (Max) @ Ipp: 77V
• Current - Peak Pulse (10/1000µs): 7.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

USB50803C/TR13

Microsemi Corporation

TVS DIODE 3.3VWM 11VC 8SOIC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 2
• Voltage - Reverse Standoff (Typ): 3.3V
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 11V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Ethernet
• Capacitance @ Frequency: 3pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

SMCJ6069AE3/TR13

Microsemi Corporation

TVS DIODE 150VWM 261VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 261V
• Current - Peak Pulse (10/1000µs): 5.7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC

SMAJ54E3/TR13

Microsemi Corporation

TVS DIODE 54VWM 96.3VC SMAJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 96.3V
• Current - Peak Pulse (10/1000µs): 5.2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacchetto: DO-214AC, SMA