Prodotti Microsemi Corporation

APT50GS60BRG

Microsemi Corporation

IGBT 600V 93A 415W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 93A
• Current - Collector Pulsed (Icm): 195A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
• Power - Max: 415W
• Switching Energy: 755µJ (off)
• Input Type: Standard
• Gate Charge: 235nC
• Td (on/off) @ 25°C: 16ns/225ns
• Test Condition: 400V, 50A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

pacchetto: TO-247-3

APT43F60B2

Microsemi Corporation

MOSFET N-CH 600V 45A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8590pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX? [B2]
• Package / Case: TO-247-3 Variant

pacchetto: TO-247-3 Variant

APTM20AM05FG

Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 317A
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
• Power - Max: 1136W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Supplier Device Package: SP6

pacchetto: SP6

JANTXV2N3635L

Microsemi Corporation

TRANS PNP 140V 1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 140V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5

pacchetto: TO-205AA, TO-5-3 Metal Can

1N5915BPE3/TR12

Microsemi Corporation

DIODE ZENER 3.9V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 7.5 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N5335CE3/TR13

Microsemi Corporation

DIODE ZENER 3.9V 5W T18

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

JANTXV1N3028BUR-1

Microsemi Corporation

DIODE ZENER 22V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

pacchetto: DO-213AB, MELF (Glass)

JANTX1N4103C-1

Microsemi Corporation

DIODE ZENER 9.1V 500MW DO35

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

1N6031C

Microsemi Corporation

DIODE ZENER 200V 500MW DO35

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 2000 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 152V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

1N5924BP/TR8

Microsemi Corporation

DIODE ZENER 9.1V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

2EZ43D10/TR12

Microsemi Corporation

DIODE ZENER 43V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N4762APE3/TR8

Microsemi Corporation

DIODE ZENER 82V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

MSD30-12

Microsemi Corporation

DIODE BRIDGE 3PH 1200V 30A SM1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: M1
• Supplier Device Package: MSD

pacchetto: M1

AGLN060V5-ZVQG100

Microsemi Corporation

IC FPGA 71 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 1536
• Total RAM Bits: 18432
• Number of I/O: 71
• Number of Gates: 60000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

pacchetto: 100-TQFP

M1AFS600-1FGG484I

Microsemi Corporation

IC FPGA 172 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 172
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacchetto: 484-BGA

M2GL060T-1FG484M

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacchetto: 484-BGA

M1A3P1000-FGG484I

Microsemi Corporation

IC FPGA 300 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 300
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacchetto: 484-BGA

MAX9450EHJ+

Microsemi Corporation

IC CLOCK GENERATOR W/VCXO 32TQFP

• PLL: Yes
• Main Purpose: 3G, Ethernet, SONET/SDH
• Input: LVCMOS, LVDS, LVPECL
• Output: LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 2:2
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 160MHz
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-TQFP Exposed Pad
• Supplier Device Package: 32-TQFP-EP (5x5)

pacchetto: 32-TQFP Exposed Pad

ZL30320GKG2

Microsemi Corporation

IC TIMING-OVER-PACKET 256TEBGA-2

• PLL: Yes
• Main Purpose: Ethernet
• Input: Clock
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 2:6
• Differential - Input:Output: No/No
• Frequency - Max: 125MHz
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 256-BGA
• Supplier Device Package: 256-BGA (17x17)

pacchetto: 256-BGA

JANTX1N6145

Microsemi Corporation

TVS DIODE 9.9VWM 19.11VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 9.9V
• Voltage - Breakdown (Min): 11.73V
• Voltage - Clamping (Max) @ Ipp: 19.11V
• Current - Peak Pulse (10/1000µs): 78.28A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: C, Axial

pacchetto: Axial

JAN1N6113A

Microsemi Corporation

TVS DIODE 15.2VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 15.2V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 18A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

pacchetto: B, Axial

MPLAD36KP110AE3

Microsemi Corporation

TVS DIODE 177VC 204A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 204A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacchetto: Nonstandard SMD

ICT-10C

Microsemi Corporation

TVS DIODE 10VWM 14.5VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 14.5V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

pacchetto: DO-13

MXLLCE51A

Microsemi Corporation

TVS DIODE 51VWM 82.4VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 18.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

pacchetto: DO-201AA, DO-27, Axial

MASMBG13CA

Microsemi Corporation

TVS DIODE 13VWM 21.5VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 27.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

pacchetto: DO-215AA, SMB Gull Wing

MASMBJ58AE3

Microsemi Corporation

TVS DIODE 58VWM 93.6VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93.6V
• Current - Peak Pulse (10/1000µs): 6.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacchetto: DO-214AA, SMB

SMLJ51AE3/TR13

Microsemi Corporation

TVS DIODE 51VWM 82.4VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 36.4A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

pacchetto: DO-214AB, SMC

SMCJ6071E3/TR13

Microsemi Corporation

TVS DIODE 165VWM 308VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 165V
• Voltage - Breakdown (Min): 180V
• Voltage - Clamping (Max) @ Ipp: 308V
• Current - Peak Pulse (10/1000µs): 4.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC