Prodotti Microsemi Corporation

APT75GN120B2G

Microsemi Corporation

IGBT 1200V 200A 833W TMAX

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 833W
• Switching Energy: 8045µJ (on), 7640µJ (off)
• Input Type: Standard
• Gate Charge: 425nC
• Td (on/off) @ 25°C: 60ns/620ns
• Test Condition: 800V, 75A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

pacchetto: TO-247-3 Variant

APTGT20DSK60T3G

Microsemi Corporation

IGBT MODULE DUAL BUCK CHOP SP3

• IGBT Type: Trench Field Stop
• Configuration: Dual Buck Chopper
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 32A
• Power - Max: 62W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

pacchetto: SP3

JAN2N6762

Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 75W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-204AA (TO-3)
• Package / Case: TO-204AA, TO-3

pacchetto: TO-204AA, TO-3

JAN2N3637UB

Microsemi Corporation

TRANS PNP 175V 1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: 3-SMD

pacchetto: 3-SMD, No Lead

JANTX1N5540B-1

Microsemi Corporation

DIODE ZENER 20V 500MW DO35

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

JAN1N4619UR-1

Microsemi Corporation

DIODE ZENER 3.0V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 400nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

pacchetto: DO-213AA

JANTXV1N4983US

Microsemi Corporation

DIODE ZENER 110V 5W D5B

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 125 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

pacchetto: E-MELF

1EZ100DE3/TR12

Microsemi Corporation

DIODE ZENER 100V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±20%
• Power - Max: 1W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N4769A

Microsemi Corporation

DIODE ZENER 9.1V 500MW DO35

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 350 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacchetto: DO-204AH, DO-35, Axial

JANTXV1N970C-1

Microsemi Corporation

DIODE ZENER 24V 500MW DO35

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

pacchetto: DO-204AH, DO-35, Axial

1N4750AP/TR8

Microsemi Corporation

DIODE ZENER 27V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

1N5377CE3/TR13

Microsemi Corporation

DIODE ZENER 91V 5W T18

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 65.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacchetto: T-18, Axial

3EZ15DE3/TR12

Microsemi Corporation

DIODE ZENER 15V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

SMBJ4740CE3/TR13

Microsemi Corporation

DIODE ZENER 10V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacchetto: DO-214AA, SMB

1PMT4112E3/TR13

Microsemi Corporation

DIODE ZENER 18V 1W DO216

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 13.37V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

pacchetto: DO-216AA

JAN1N6623

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 500nA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A-PAK
• Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: A, Axial

JANTX1N3893R

Microsemi Corporation

DIODE GEN PURP 400V 12A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 38A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-203AA, DO-4, Stud

JANTX1N5806URS

Microsemi Corporation

DIODE GEN PURP 150V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, A

MSD200-08

Microsemi Corporation

DIODE BRIDGE 3PH 800V 200A SM3

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
• Current - Reverse Leakage @ Vr: 300µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M3
• Supplier Device Package: M3

pacchetto: M3

SG1548J

Microsemi Corporation

IC PWR FAULT MON QUAD 16JDIP

• Applications: Power Supply Monitor
• Voltage - Input: -
• Voltage - Supply: 4.5 V ~ 35 V
• Current - Supply: 4.8mA
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: -
• Supplier Device Package: 16-CDIP

pacchetto: -

AFS1500-1FGG484K

Microsemi Corporation

IC FPGA 223 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 276480
• Number of I/O: 223
• Number of Gates: 1500000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacchetto: 484-BGA

AGL060V2-CSG121

Microsemi Corporation

IC FPGA 96 I/O 121CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 1536
• Total RAM Bits: 18432
• Number of I/O: 96
• Number of Gates: 60000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 121-VFBGA, CSBGA
• Supplier Device Package: 121-CSP (6x6)

pacchetto: 121-VFBGA, CSBGA

JAN1N6165A

Microsemi Corporation

TVS DIODE 69.2VWM CPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 69.2V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125.1V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: G, Axial
• Supplier Device Package: C, Axial

pacchetto: G, Axial

MX5KP9.0CA

Microsemi Corporation

TVS DIODE 9VWM 15.4VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 325A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacchetto: DO-204AR, Axial

MXP5KE58CA

Microsemi Corporation

TVS DIODE 58VWM 93.6VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93.6V
• Current - Peak Pulse (10/1000µs): 5.3A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacchetto: DO-204AL, DO-41, Axial

MASMCG12AE3

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 75.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

MSMLG130CA

Microsemi Corporation

TVS DIODE 130VWM 209VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 14.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

pacchetto: DO-215AB, SMC Gull Wing

SMCJ6039/TR13

Microsemi Corporation

TVS DIODE 8VWM 15VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8V
• Voltage - Breakdown (Min): 9V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 100A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacchetto: DO-214AB, SMC