Pagina 2 - Prodotti Microchip Technology - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MSCSM120HM083CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM70VM10C4AG	Microchip Technology	SIC 2N-CH 700V 238A SP4 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP4	pacchetto: -	Azione3	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP4
MSCSM120TLM11CAG	Microchip Technology	SIC 4N-CH 1200V 251A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Power - Max: 1042W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	pacchetto: -	Request a Quote	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9000pF @ 1000V	1042W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
MSCSM70AM07CT3AG	Microchip Technology	SIC 2N-CH 700V 353A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 988W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacchetto: -	Azione9	-	700V	353A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	988W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM170AM058CD3AG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Azione18	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM027T6AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2.97kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 27mA	2088nC @ 20V	27000pF @ 1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM027CD3AG	Microchip Technology	SIC 2N-CH 1200V 733A D3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Power - Max: 2.97kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	pacchetto: -	Azione3	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	27000pF @1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	D3
MSCSM170HM23CT3AG	Microchip Technology	SIC 4N-CH 1700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM31T1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120VR1M11CT6AG	Microchip Technology	SIC 2N-CH 1200V 251A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Power - Max: 1.042kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9000pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70AM025CD3AG	Microchip Technology	SIC 700V 538A D3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 538A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	pacchetto: -	Azione12	-	700V	538A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	D3
MSCSM120TLM31C3AG	Microchip Technology	SIC 4N-CH 1200V 89A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacchetto: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM170AM23CT1AG	Microchip Technology	SIC 2N-CH 1700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DUM11T3AG	Microchip Technology	SIC 2N-CH 1200V 254A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Power - Max: 1067W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacchetto: -	Request a Quote	-	1200V (1.2kV)	254A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9060pF @ 1000V	1067W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120HM16CT3AG	Microchip Technology	SIC 4N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacchetto: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120HM063CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM70VR1M07CT6AG	Microchip Technology	SIC 2N-CH 700V 349A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 966W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70HM038AG	Microchip Technology	SIC 4N-CH 700V 464A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Power - Max: 1.277kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	700V	464A (Tc)	4.8mOhm @ 160A, 20V	2.4V @ 16mA	860nC @ 20V	18000pF @ 700V	1.277kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120HRM08NG	Microchip Technology	SIC 4N-CH 1200V/700V 317A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V Power - Max: 1.253kW (Tc), 613W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV), 700V	317A (Tc), 227A (Tc)	7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V	2.8V @ 12mA, 2.4V @ 8mA	928nC @ 20V, 430nC @ 20V	12100pF @ 1000V, 9000pF @ 700V	1.253kW (Tc), 613W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCMC120AM07CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 264A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 264A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 4V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V Power - Max: 1350W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	pacchetto: -	Request a Quote	-	1200V (1.2kV)	264A (Tc)	8.7mOhm @ 240A, 20V	4V @ 60mA	690nC @ 20V	11400pF @ 1000V	1350W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM120AM16CT1AG	Microchip Technology	SIC 2N-CH 1200V 173A SP1F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1F	pacchetto: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
MSCSM70DUM10T3AG	Microchip Technology	SIC 2N-CH 700V 241A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacchetto: -	Azione30	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM170TAM45CT3AG	Microchip Technology	SIC 6N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM042CD3AG	Microchip Technology	SIC 2N-CH 1200V 495A D3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	pacchetto: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18.1pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	D3
MSCSM120DDUM16TBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70HM05CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120AM13CT6AG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120AM042T6AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-

MSCSM120HM083CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

MSCSM70VM10C4AG

Microchip Technology

SIC 2N-CH 700V 238A SP4

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 674W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP4

pacchetto: -

Azione3

-

700V

238A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

674W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP4

MSCSM120TLM11CAG

Microchip Technology

SIC 4N-CH 1200V 251A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Power - Max: 1042W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

pacchetto: -

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1200V (1.2kV)

251A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 3mA

696nC @ 20V

9000pF @ 1000V

1042W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

MSCSM70AM07CT3AG

Microchip Technology

SIC 2N-CH 700V 353A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Power - Max: 988W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacchetto: -

Azione9

-

700V

353A (Tc)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

645nC @ 20V

13500pF @ 700V

988W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM170AM058CD3AG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1.642kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

Azione18

-

1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1.642kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM027T6AG

Microchip Technology

SIC 2N-CH 1200V 733A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Power - Max: 2.97kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1200V (1.2kV)

733A (Tc)

3.5mOhm @ 360A, 20V

2.8V @ 27mA

2088nC @ 20V

27000pF @ 1000V

2.97kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM027CD3AG

Microchip Technology

SIC 2N-CH 1200V 733A D3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Power - Max: 2.97kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3

pacchetto: -

Azione3

-

1200V (1.2kV)

733A (Tc)

3.5mOhm @ 360A, 20V

2.8V @ 9mA

2088nC @ 20V

27000pF @1000V

2.97kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

D3

MSCSM170HM23CT3AG

Microchip Technology

SIC 4N-CH 1700V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM31T1AG

Microchip Technology

SIC 2N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120VR1M11CT6AG

Microchip Technology

SIC 2N-CH 1200V 251A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Power - Max: 1.042kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1200V (1.2kV)

251A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 9mA

696nC @ 20V

9000pF @ 1000V

1.042kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70AM025CD3AG

Microchip Technology

SIC 700V 538A D3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3

pacchetto: -

Azione12

-

700V

538A (Tc)

-

Chassis Mount

Module

D3

MSCSM120TLM31C3AG

Microchip Technology

SIC 4N-CH 1200V 89A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacchetto: -

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1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM170AM23CT1AG

Microchip Technology

SIC 2N-CH 1700V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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-

1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120DUM11T3AG

Microchip Technology

SIC 2N-CH 1200V 254A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Power - Max: 1067W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacchetto: -

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1200V (1.2kV)

254A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 3mA

696nC @ 20V

9060pF @ 1000V

1067W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM120HM16CT3AG

Microchip Technology

SIC 4N-CH 1200V 173A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacchetto: -

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1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM120HM063CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

MSCSM70VR1M07CT6AG

Microchip Technology

SIC 2N-CH 700V 349A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Power - Max: 966W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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-

700V

349A (Tc)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

645nC @ 20V

13500pF @ 700V

966W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70HM038AG

Microchip Technology

SIC 4N-CH 700V 464A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Power - Max: 1.277kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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700V

464A (Tc)

4.8mOhm @ 160A, 20V

2.4V @ 16mA

860nC @ 20V

18000pF @ 700V

1.277kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120HRM08NG

Microchip Technology

SIC 4N-CH 1200V/700V 317A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V
Power - Max: 1.253kW (Tc), 613W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1200V (1.2kV), 700V

317A (Tc), 227A (Tc)

7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V

2.8V @ 12mA, 2.4V @ 8mA

928nC @ 20V, 430nC @ 20V

12100pF @ 1000V, 9000pF @ 700V

1.253kW (Tc), 613W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCMC120AM07CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 264A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 264A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs: 690nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 1000V
Power - Max: 1350W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

pacchetto: -

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1200V (1.2kV)

264A (Tc)

8.7mOhm @ 240A, 20V

4V @ 60mA

690nC @ 20V

11400pF @ 1000V

1350W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

MSCSM120AM16CT1AG

Microchip Technology

SIC 2N-CH 1200V 173A SP1F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1F

pacchetto: -

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-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1F

MSCSM70DUM10T3AG

Microchip Technology

SIC 2N-CH 700V 241A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 690W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacchetto: -

Azione30

-

700V

241A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

690W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM170TAM45CT3AG

Microchip Technology

SIC 6N-CH 1700V 64A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
Power - Max: 319W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1700V (1.7kV)

64A (Tc)

45mOhm @ 30A, 20V

3.2V @ 2.5mA

178nC @ 20V

3300pF @ 1000V

319W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM042CD3AG

Microchip Technology

SIC 2N-CH 1200V 495A D3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3

pacchetto: -

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-

1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 6mA

1392nC @ 20V

18.1pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

D3

MSCSM120DDUM16TBL3NG

Microchip Technology

SIC 4N-CH 1200V 150A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 560W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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-

1200V (1.2kV)

150A

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

560W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70HM05CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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MSCSM120AM13CT6AG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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MSCSM120AM042T6AG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 18mA

1392nC @ 20V

18100pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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