Prodotti IXYS

IXGT40N60C2D1

IXYS

IGBT 600V 75A 300W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 200µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 18ns/90ns
• Test Condition: 400V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXBT24N170

IXYS

IGBT 1700V 60A 250W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.06µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGR35N120D1

IXYS

IGBT 1200V ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

pacchetto: ISOPLUS247?

MUBW10-06A6

IXYS

MODULE IGBT CBI E1

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Power - Max: 45W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
• Current - Collector Cutoff (Max): 20µA
• Input Capacitance (Cies) @ Vce: 0.435nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

pacchetto: E1

IXFX32N48Q

IXYS

MOSFET N-CH PLUS247

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

IXFN44N50Q

IXYS

MOSFET N-CH 500V 44A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 44A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

IXTP260N055T2

IXYS

MOSFET N-CH 55V 260A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IXFA230N075T2

IXYS

MOSFET N-CH 75V 230A TO-263AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTY8N65X2

IXYS

MOSFET N-CH 650V 8A X2 TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

VMM90-09P

IXYS

MOSFET 2N-CH 900V 85A Y3-LI

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MCC500-22IO1

IXYS

SCR THY PHASE LEG 2200V WC-500

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2200V
• Current - On State (It (AV)) (Max): 545A
• Current - On State (It (RMS)) (Max): 1294A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
• Current - Hold (Ih) (Max): 1A
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: WC-500

pacchetto: WC-500

MCC94-20IO1B

IXYS

MOD THYRISTOR DUAL 2000V TO240AA

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2000V
• Current - On State (It (AV)) (Max): 104A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

pacchetto: TO-240AA

MCD220-16IO1

IXYS

MOD THYRISTOR/DIODE 1800V Y2-DCB

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 400A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y2-DCB

pacchetto: Y2-DCB

VVZ70-08IO7

IXYS

RECT BRIDGE 3PH 800V FO-T-A

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number of SCRs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 70A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

pacchetto: FO-T-A

VHFD16-14IO1

IXYS

RECT BRIDGE 1PH 1400V V1A-PAK

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
• Number of SCRs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 16A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Gate Trigger (Igt) (Max): 65mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 150A, 170A
• Current - Hold (Ih) (Max): 100mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1A-PAK

pacchetto: V1A-PAK

DGS4-025A

IXYS

DIODE SCHOTTKY 250V 5.4A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 5.4A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 250V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: TO-220-2

DSSK40-008B

IXYS

DIODE ARRAY SCHOTTKY 80V TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 80V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

pacchetto: TO-3P-3 Full Pack

DSSK20-0045A

IXYS

DIODE ARRAY SCHOTTKY 45V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 45V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: TO-220-3

DSEP2X61-06A

IXYS

DIODE MODULE 600V 60A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 650µA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

pacchetto: SOT-227-4, miniBLOC

VUB120-16NO2

IXYS

RECT BRIDGE 3PH 1600V V2-PACK

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 188A
• Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A
• Current - Reverse Leakage @ Vr: 500µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V2-PAK
• Supplier Device Package: V2-PAK

pacchetto: V2-PAK

VUO85-14NO7

IXYS

RECT BRIDGE 3PH 85A 1400V FO-T-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
• Current - Reverse Leakage @ Vr: 500µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A
• Supplier Device Package: FO-T-A

pacchetto: FO-T-A

XOB17-12X1

IXYS

SENSOR MONOCRYSTALLINE MODULE

• Power (Watts) - Max: 20mW
• Current @ Pmpp: 39mA
• Voltage @ Pmpp: 510mV
• Current Short Circuit (Isc): 42mA
• Type: Monocrystalline
• Voltage - Open Circuit: 630mV
• Operating Temperature: -
• Package / Case: Cells
• Size / Dimension: 0.866" L x 0.276" W x 0.063" H (22.00mm x 7.00mm x 1.60mm)

pacchetto: Cells

IXFH150N30X3

IXYS

MOSFET N-CH 300V 150A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacchetto: -

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W2865HA680

IXYS

DIODE GEN PURP 6.8KV 4825A W121

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6800 V
• Current - Average Rectified (Io): 4825A
• Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 53 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD
• Supplier Device Package: W121
• Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

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N2900QL040

IXYS

SCR 400V 5520A WP6

• Voltage - Off State: 400 V
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.47 V
• Current - On State (It (AV)) (Max): 2900 A
• Current - On State (It (RMS)) (Max): 5520 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: WP6

pacchetto: -

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MCB30P1200LB-TRR

IXYS

SIC 2N-CH 1200V 9SMPD

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 9-PowerSMD
• Supplier Device Package: 9-SMPD-B

pacchetto: -

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IXYH30N120C4

IXYS

DISC IGBT XPT-GENX4 TO-247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 94 A
• Current - Collector Pulsed (Icm): 166 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
• Power - Max: 500 W
• Switching Energy: 4.8mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 57 nC
• Td (on/off) @ 25°C: 18ns/205ns
• Test Condition: 960V, 25A, 5Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

pacchetto: -

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DNA30E2200PZ-TUB

IXYS

DIODE GEN PURP 2.2KV 30A TO263HV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
• Capacitance @ Vr, F: 7pF @ 700V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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